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Single chip integrated temperature compensation film buck acoustic resonator

A thin-film bulk acoustic wave and single-chip integration technology, which is applied to electrical components, impedance networks, etc., can solve problems such as system errors, and achieve the effects of low bias voltage, overcoming system errors, and low power consumption

Inactive Publication Date: 2013-09-25
江苏艾伦摩尔微电子科技有限公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0007] The present invention is based on a novel thin-film bulk acoustic resonator (FBAR) integrating Schottky diodes, provides a temperature compensation method and circuit for FBAR, and solves various systems of existing FBARs caused by frequency drift at different temperatures Error problem, improving the application effect and product productivity of FBAR in wireless communication and quality sensing

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  • Single chip integrated temperature compensation film buck acoustic resonator
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  • Single chip integrated temperature compensation film buck acoustic resonator

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Embodiment Construction

[0019] figure 1 It is a schematic diagram of the single-chip integrated temperature-compensated film bulk acoustic resonator of the present invention. The air gap type FBAR is used here. The DC bias unit 8 is a circuit unit containing a temperature-sensitive resistor, which can be prepared on the surface of the substrate 7 together with other circuits using a common CMOS process, and is connected to an external chip power supply 11 to provide a bias voltage for the thin film bulk acoustic wave resonator, and the output voltage They are respectively added to the upper and lower electrodes of the film bulk acoustic wave resonator. The film bulk acoustic resonator of the present invention is composed of an upper electrode 1, a semiconductor thin layer 2, a piezoelectric layer 3, a lower electrode 4, and an acoustic reflection layer, that is, an air gap 5. The upper electrode (Au or Cr) 1 and the semiconductor thin layer (n-ZnO, N d =10 13 ~10 14 cm -3 ) 2 constitutes a Schottky ...

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Abstract

The invention discloses a single chip integrated temperature compensation film buck acoustic resonator. A direct-current bias unit is arranged to provide bias voltages for the film buck acoustic resonator. The output end of the direct-current bias unit is respectively connected to an upper electrode of the film buck acoustic resonator and a lower electrode of the film buck acoustic resonator, wherein a schottky junction is embedded inside the film buck acoustic resonator. The direct-current bias unit and the film buck acoustic resonator are integrated in a silicon wafer CELL. A bias device exerts certain bias voltages on the film buck acoustic resonator to change the capacitance and the conductivity of a schottky barrier diode, and therefore temperature changes of the resonant frequency of the FBAR itself are compensated. According to the single chip integrated temperature compensation film buck acoustic resonator, effective or even non-bias compensation to frequency bias, caused by temperature, of the film buck acoustic resonator is realized, the problems of various system errors caused by temperature change can be solved, and the application reliability of the FBAR aspects of wireless communication and sensors is improved. The single chip integrated temperature compensation film buck acoustic resonator which is realized by the adoption of the CMOS integration technology is simple in structure, flexible in realizing method, and wide in range of application.

Description

[0001] technical field [0002] The invention relates to the technical field of radio frequency resonators, in particular to a temperature drift compensation method and circuit of a thin film bulk acoustic wave resonator. Background technique [0003] Film Bulk Acoustic Resonator (FBAR) has been widely used in wireless communication systems in recent years due to its high operating frequency, high sensitivity, excellent filtering characteristics, low insertion loss, and high power carrying capacity. Duplexers, oscillators and other related components of wireless communication RF front-end. In addition, FBAR is more and more widely used in the field of sensors because of its high sensitivity. [0004] Most FBAR devices have a bandpass characteristic frequency response characterized by a center frequency, and its frequency response characteristic is characterized by a resonant frequency. The application of FBAR in wireless communication and quality sensing is mainly based o...

Claims

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Application Information

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IPC IPC(8): H03H9/17
Inventor 董树荣卞晓磊胡娜娜郭维
Owner 江苏艾伦摩尔微电子科技有限公司
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