High-power semiconductor laser transition heat sink and preparation method thereof

Abstract

The invention provides a high-power semiconductor laser transition heat sink and a preparation method thereof. The transition heat sink comprises a substrate, a metal transition layer and a welding flux adhering layer. The substrate consists of an SiC wafer, a titanium metal transition layer or a chromium metal transition layer and a gold welding flux adhering layer are sequentially arranged on the upper surface and the lower surface of the SiC wafer respectively in an evaporation mode, the upper surface and the lower surface of the SiC wafer are an A face and a B face respectively, and an insulated slot is manufactured in the A face. The preparation method includes the steps of conducting wire-electrode cutting on the SiC wafer to cut the SiC wafer into a wafer, washing the wafer, conducting surface metallization on the SiC wafer, etching the insulated slot in the A face of the metallized wafer, and forming the single laser transition heat sink in a dividing mode. The heat-conducting property of the high-power semiconductor laser transition heat sink based on the SiC wafer is better than the heat-conducting property of a transition heat sink of an aluminum nitride ceramic substrate, the size is accurate, and the size can be determined flexibly according to the packaging need of a high-power laser.

Description

technical field [0001] The invention relates to a transitional heat sink for packaging a high-power semiconductor laser and a preparation method thereof, belonging to the technical field of semiconductor lasers. Background technique [0002] With the advent of lasers, laser technology has been widely used in various technical fields. Due to the advantages of small size, high power, and stable performance, semiconductor lasers have been widely used in various fields such as industry, medicine, and military affairs. With the continuous maturity of laser packaging technology, the required laser power continues to increase, and the difficulty of laser packaging is also getting higher and higher. To meet the demand for high power lasers, there are generally two solutions, connecting semiconductor chips in parallel or in series. The method of parallel connection is to use the metal heat sink as the substrate to weld the semiconductor chip on it to achieve the purpose of parallel ...

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Problems solved by technology

[0005] The Chinese patent document CN102074890A "A Method for Packaging Die Series Lasers" proposes a method of using SiC as a transitional heat sink. This invention solves the problem that the transitional heat sink cannot be guaranteed by directly evaporating a titanium gold layer on the top and bottom surfaces of the transitional heat sink. The insulation of the side is easy to cause the problem of metal connection between the upper and lower sides. A new method is proposed to directly carry out metallization on the whole SiC crystal, and then make the required insulating groove by photolithography or ion etching. Finally The required transitional heat sink is obtained by dividing the SiC crystal, which ensures the insulation of the upper and lower sides

However, this method uses physical destruction to insulate the bar, which is easy to cause damage to the bar, and the hardness of SiC is very large, close to that of diamond. It is very difficult to cut directly by physical methods, which is easy to cause damage to the laser and must be determined according to the conditions of the bar. Cut size is very limited

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