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Aluminum alloy bonding wire

A technology of aluminum alloy and wedge joint, which is applied in welding equipment, welding medium, metal processing equipment, etc.

Inactive Publication Date: 2013-09-25
TANAKA DENSHI KOGYO KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Pure aluminum alloy thin wires made of high-purity aluminum (Al), which are easily softened in this temperature range, have not been practically used in devices used in this high-temperature environment

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Each of the four Al-Ac alloys formed of aluminum (Al) with a purity of 99.99% by mass and scandium (Sc) with a purity of 99.9% by mass, namely, Al-0.15%Sc, Al-0.2%Sc , Al-0.3%Sc and Al-0.5%Sc were melted and then continuously casted to obtain an aluminum alloy ingot with a diameter of 300mm.

[0039] Element aluminum alloy wires having a diameter of 5 mm were produced by rolling each ingot using a grooved roll and then drawing. The primary wire was then solution heat treated at 630 °C x 120 min, followed by quenching in water. Thereafter, continuous wire drawing was performed in water using a diamond die to obtain a diameter of 0.5 mm, followed by tempering heat treatment at 620° C.×1 min, followed by water cooling.

[0040] The samples were used as Example 1 (Samples 1 to 4). Each of Example 1 was measured using a micro Vickers hardness tester (Model MVK-G3 produced by Akashi Corporation). The measured hardness values ​​are shown in Table 1.

[0041] Each of Exampl...

Embodiment 2

[0057] By using Al-0.2%Sc-0.1%Zr and Al-0.5%Sc-0.25%Zr alloys, in the same manner as in Example 1, fine aluminum alloy wires each having a diameter of 0.5 mm were prepared for use as examples 2 (Samples 5 and 6), each of which was formed of aluminum (Al) with a purity of 99.99% by mass, scandium (Sc) with a purity of 99.9% by mass, and zirconium (Zr) with a purity of 99.9% by mass.

[0058] Subsequently, under the same conditions as those of Example 1, the samples were subjected to ultrasonic bonding and aging heat treatment.

[0059] Under the same conditions as in Example 1, the above test was performed. The test results are shown in Table 1.

Embodiment 3

[0061] By using the Al-0.3% Sc alloy, in the same manner as in Example 1, thin aluminum alloy wires with a diameter of 0.1 mm and a diameter of 0.3 mm were respectively prepared for Example 3 (samples 7 and 8), so The alloy is formed of aluminum (Al) with a purity of 99.99% by mass and scandium (Sc) with a purity of 99.9% by mass.

[0062] Subsequently, under the same conditions as those of Example 1, the samples were subjected to ultrasonic bonding and aging heat treatment.

[0063] Under the same conditions as in Example 1, the above test was performed on the sample. The test results are shown in Table 1.

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Abstract

The invention discloses an aluminum alloy bonding wire, which is a soft wedge-shaped bonding wire during an ultrasonic bonding process and can prevent a chip from being broken and further display high-temperature strength after a wiring process. The invention provides the aluminum alloy bonding wire, which is composed of scandium (Sc) of 0.15 to 0.5 weight percent and aluminum with the balance purity being over 99.99 weight percent. The aluminum alloy bonding wire further has cold wire-drawing tissues in forcibly soluable aluminum substrates and vickers hardness ranging from 21 to 30. The aluminum alloy bonding wire can be strengthened by adding zirconium (Zr) of 0.01 to 0.2 weight percent. The aluminum alloy bonding wire is soft during a bonding process, thus the bonding wire can be connected without breaking the chip. Furthermore, by performing timely thermal processing after the bonding process, the high-temperature strength of the aluminum alloy bonding wire can be improved.

Description

technical field [0001] The present invention relates to an aluminum alloy wiring material used for bonding electrodes on a semiconductor element used in a high-temperature environment to external electrodes using aluminum alloy thin wires, and in particular, to a 3 Sc particles achieve the effect of aluminum alloy bonding wire, the Al 3 Sc particles are age-precipitated from high-purity aluminum in high-temperature environments such as semiconductor devices used in aircraft, electric vehicles, and ships. Background technique [0002] For bonding pads mounted on semiconductor elements such as silicon (Si), silicon carbide (SiC), and gallium nitride (GaN), substrates of aluminum (Al), copper (Cu), nickel (Ni), and the like are generally used. For application, a noble metal plating layer of gold (Au), silver (Ag) or the like or nickel (Ni) plating layer is provided on the substrate in some cases. These substrates are collectively referred to as "aluminum discs" unless otherwi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C21/00H01L21/60
CPCH01L2224/45124H01L2224/45015H01L2924/00014H01L2924/10253H01L24/43H01L2224/43H01L2224/45H01L2924/01021H01L2924/01204H01L2924/20755H01L2924/20756H01L2924/20757H01L2924/20758H01L2924/20759H01L2924/2076H01L2924/0104H01L2924/013H01L2924/00H01L2224/48H01L2924/00012B23K35/28C22C21/00
Inventor 天野裕之三上道孝中岛伸一郎市川司
Owner TANAKA DENSHI KOGYO KK
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