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LED structure capable of reducing working temperature of active area and manufacturing method thereof

A technology of LED structure and working temperature, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of LED heating, complex energy consumption of cooling means, poor cooling effect, etc., and improve light extraction efficiency , reduce the effective refractive index, and be easy to integrate and prepare

Inactive Publication Date: 2013-09-11
Shandong Huaguang Optoelectronics Co. Ltd. +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this utility model is: the heat dissipation effect is poor, and the problem of LED heating is still not fundamentally solved
[0008] To sum up, the existing technology is to cool the LED outside the LED, not only the cooling effect is not good, but also the cooling method used is complicated in energy consumption.

Method used

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  • LED structure capable of reducing working temperature of active area and manufacturing method thereof
  • LED structure capable of reducing working temperature of active area and manufacturing method thereof
  • LED structure capable of reducing working temperature of active area and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] Example 1. Preparation of LED with 2-inch sapphire substrate with GaN-based electrode structure on the same plane

[0057] structured as figure 1 and image 3 As shown, the structure from the bottom to the top of the GaN-based LED with the same plane electrode structure is sapphire substrate layer 7, intrinsic GaN layer 6, n-GaN confinement layer 5, active region light-emitting layer 4, p-GaN confinement layer Layer 3, current spreading layer 2 and p-plane electrode 1; holes 19 are formed on the upper surface of the p-GaN confinement layer 3 to form a hole array, and the holes 19 are arranged six times symmetrically; the period of the holes 19 is 2 μm, The diameter of the hole is 1 μm, and the duty ratio of the hole on the lower surface of the p-GaN confinement layer is 50%; the distance s1 between the bottom edge of the hole 19 and the light-emitting layer 13 in the active region is 30 nm; the bottom of the hole has a thickness of 3 nm silver film.

[0058] The prep...

Embodiment 2

[0064] Embodiment 2. Preparation of LED with GaN-based vertical electrode structure on 2-inch sapphire substrate

[0065] structured as figure 2 and Figure 4 , the LED includes a p-side electrode 18, a sapphire substrate layer 17, a metal reflector 16, a p-GaN confinement layer 14, an active region light-emitting layer 13, an n-GaN confinement layer 12, an intrinsic GaN layer arranged from bottom to top 11 and an n-face electrode 10; holes 20 are formed on the lower surface of the p-GaN confinement layer 14 to form a hole array, and the holes are arranged four times symmetrically; the period of the holes is 10 μm, and the diameter of the holes is 2.5 μm. The duty cycle of the lower surface of the p-GaN confinement layer is 25%; the distance s2 between the bottom of the hole 20 and the light-emitting layer 13 in the active region is 40nm; there is a silver film with a thickness of 5nm at the bottom of the hole 20 .

[0066] The preparation method steps are as follows:

[0...

Embodiment 3

[0072] Example 3. Preparation of an LED with a GaN-based electrode structure on a 2-inch silicon carbide substrate

[0073] structured as figure 1 and Figure 4 , the GaN-based LED with the same-plane electrode structure as described in Embodiment 1, the structure of the GaN-based LED with the same-plane electrode structure from the bottom to the top is a silicon carbide substrate layer 7, an intrinsic GaN layer 6, and n-GaN confinement layer 5, active region light-emitting layer 4, p-GaN confinement layer 3, current spreading layer 2 and p-surface electrode 1; the holes 19 are arranged four times symmetrically; the period of the holes is 20 μm, and the diameter of the holes is 5 μm, so The duty cycle of the hole 19 on the upper surface of the p-GaN confinement layer 3 is 25%; the distance s1 between the bottom of the hole 19 and the light-emitting layer 4 in the active region is 50nm; there is a silver film with a thickness of 10nm at the bottom of the hole.

[0074] The pr...

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Abstract

The invention relates to an LED structure capable of reducing work temperature of an active area and a manufacturing method of the LED structure. The LED structure comprises a substrate layer, an intrinsic GaN layer, an n-GaN limiting layer, an active zone luminous layer, a p-GaN limiting layer, a p-face electrode and an n-face electrode, wherein the upper surface of the p-GaN limiting layer or the lower surface of the p-GaN limiting layer is provided with holes, the holes form a hole array, the cycle of each hole is 2-20 microns, the diameter of each hole is 1-5 microns, the bottom edge of each hole is 30-50 nanometers away from the active zone luminous layer and a silver thin film with the thickness being 1-10 nanometers is arranged on the bottom edges of the holes. Due to the fact that the service lives of carriers which are compounded in a non-radiating mode are long, only after phonons are coupled, the carriers can be compounded. A strong local electric field which is generated through vibration of plasmons can conduct compensation on the carriers and a new channel is provided for compounding of the carriers with the long service lives, so that auxiliary compound rate of the phonons is reduced and the purpose of reducing heating of a device is realized.

Description

technical field [0001] The invention relates to an LED structure for reducing the working temperature of an active region and a preparation method thereof, belonging to the technical field of light-emitting diode manufacturing. Background technique [0002] In the 1950s, with the efforts of many well-known research institutions represented by IBM Thomas J. Watson Research Center, III-V semiconductors represented by GaAs rose rapidly in the field of semiconductor light emitting. Later, with the emergence of metal oxide chemical vapor deposition (MOCVD) technology, the growth of high-quality III-V semiconductors broke through the technical barrier, and semiconductor light-emitting diode devices with various wavelengths flooded into the market one after another. Compared with the current light-emitting devices, semiconductor light-emitting diodes have the characteristics of high theoretical efficiency, long life, and mechanical shock resistance, and are regarded as a new genera...

Claims

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Application Information

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IPC IPC(8): H01L33/04H01L33/00
Inventor 左致远夏伟刘铎苏建徐现刚
Owner Shandong Huaguang Optoelectronics Co. Ltd.
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