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Method for producing a semiconductor layer with a textured surface, method for producing a solar cell

A solar cell and textured surface technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve problems such as inability to produce in large quantities, poor flatness of thin chips, and inability to provide thin chips

Active Publication Date: 2016-03-09
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the thin chips produced by the above method have poor flatness, are not easy to be large-scale, and cannot be mass-produced.
In addition, current fabrication methods do not provide thin chips with textured surface structures

Method used

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  • Method for producing a semiconductor layer with a textured surface, method for producing a solar cell
  • Method for producing a semiconductor layer with a textured surface, method for producing a solar cell
  • Method for producing a semiconductor layer with a textured surface, method for producing a solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0067] First provide a patterned sapphire substrate, image 3 A scanning electron microscope image showing regular patterns on a sapphire substrate.

[0068] Afterwards, using plasma-assisted chemical vapor deposition (Plasma enhanced chemical vapor deposition, PECVD), pass into silane (SiH 4 ) as a reaction gas, under the conditions of a coating temperature of about 200° C., a coating pressure of about 0.5 torr, and a coating power of about 200 W, microcrystalline silicon with a thickness of about 3 μm is formed on the patterned sapphire substrate.

[0069] Next, a conductive silver paste (DuPont PV-159) was coated on the surface of the microcrystalline silicon. Afterwards, the patterned sapphire substrate is placed in an oven at 600°C for 30 minutes of heat treatment, and the microcrystalline silicon layer can be transferred to the conductive silver glue to obtain a thin silicon layer with a regular pattern on the conductive silver glue. Figure 4 A scanning electron micro...

Embodiment 2

[0071] The preparation method of embodiment 2 is similar to embodiment 1, and the only difference is that conductive silver glue (DuPont PV-412) is coated on the microcrystalline silicon surface. Afterwards, the patterned sapphire substrate was placed in an oven at 250°C for 10 minutes of heat treatment, and then the microcrystalline silicon layer was transferred onto the conductive silver paste to obtain a thin silicon layer with a regular pattern on the conductive silver paste.

Embodiment 3

[0072] Embodiment 3 is made into a solar cell

[0073] Taking the thin silicon layer of Example 1, a silicon nitride anti-reflection layer was formed on the thin silicon layer by coating method. Afterwards, a silver metal layer is formed by electroplating to complete a thin solar cell, wherein the conductive silver paste can be used as a back contact, and the silver metal layer can be used as a front contact.

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Abstract

The present invention provides a method for manufacturing a semiconductor layer with a textured surface and a method for manufacturing a solar cell. The former includes the following steps: (a) providing a patterned substrate; (b) forming at least one semiconductor layer on the patterned substrate; (c) forming a metal layer on the semiconductor layer; and (d) performing a heat treatment process on the patterned substrate and the above layers to transfer the semiconductor layer to the metal layer and remove the patterned substrate to obtain a textured substrate. The semiconductor layer on the textured surface.

Description

technical field [0001] The present invention relates to a method of making thin semiconductor layers, and in particular to a method of making semiconductor layers with textured surfaces. Background technique [0002] In order to reduce the production cost of solar cells, the technology of thin chips has been developed. The current method of making thin chips is to cut the chips thinner, but the chip is easy to break during the cutting process, and if it is subsequently assembled into a battery, it is also a challenge not to damage the thin chip during the assembly process. [0003] U.S. Patent No. 7,077,901 discloses a method for making a single crystal silicon wafer (single crystal silicon wafer), which first makes a porous layer (porous) on a single crystal silicon substrate, and then places the single crystal silicon substrate in a silicon solution to form The single crystal layer is on the porous layer. Afterwards, the porous layer is destroyed by external force to obt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L31/18
CPCH01L31/02363H01L31/1896Y02E10/50
Inventor 王珽玉陈建勋杜政勋贡中元
Owner IND TECH RES INST
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