Semiconductor structure and forming method thereof

Abstract

The invention provides a semiconductor structure and a forming method thereof. The method comprises the following steps: providing a substrate; forming a first monocrystal semiconductor layer on the substrate; etching the first monocrystal semiconductor layer to form a plurality of openings; etching the first monocrystal semiconductor layer from the plurality of openings to form a plurality of holes or slots, which extend to the top surface or the interior of the substrate; performing corrosion treatment of the substrate through the plurality of holes or slots to enable the top of the substrate to adopt a porous structure; and depositing a monocrystal semiconductor material to form a second monocrystal semiconductor layer on the first monocrystal semiconductor layer. By adopting the method, the dislocation density of a monocrystal semiconductor can be reduced, cracks caused by thermal mismatch are avoided, the growth quality of a thin film is improved, and cost reduction and substrate stripping in the later period are facilitated.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] In recent years, with the development of semiconductor technology, the integration of different kinds of heterogeneous materials on one substrate has attracted more and more attention. Different applications such as power semiconductor devices, optoelectronic devices, and high-speed logic devices often require different semiconductor materials, such as From the perspective of breakdown voltage, power semiconductor devices need SiC and GaN materials with large bandgap width. Optoelectronic devices need GaAs, GaN and other materials with direct bandgap semiconductors. High-speed logic devices need to use SiGe and other semiconductor materials. Realizing more complex functions on a chip requires high-quality heterogeneous semiconductor materials on the same substrate, and these ...

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Problems solved by technology

[0002] In recent years, with the development of semiconductor technology, the integration of different kinds of heterogeneous materials on one substrate has attracted more and more attention. Different applications such as power semiconductor devices, optoelectronic devices, and high-speed logic devices often require different semiconductor materials, such as From the perspective of breakdown voltage, power semiconductor devices need SiC and GaN materials with large bandgap width. Optoelectronic devices need GaAs, GaN and other materials with direct bandgap semiconductors. High-speed logic devices need to use SiGe and other semiconductor materials. Realizing more complex functions on a chip requires high-quality heterogeneous semiconductor materials on the same substrate, and these materials are very different from the substrate materials in many properties, such as lattice structure and lattice constant. The difference in the dislocation density will cause high dislocation density, which seriously affects the performance of the fabricated device; the difference in thermal expansion coefficient will cause the epitaxial heterogeneous material film on the substrate to crack during the growth process or cooling process, and even cause the entire wafer broken

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