Method for bridging electrodes of LED light-emitting units isolated by deep trenches

Abstract

The invention provides a method for bridging electrodes of LED light-emitting units isolated by deep trenches. The method is specifically implemented for large LED chips with a plurality of light-emitting units isolated by deep trenches. The method includes steps of depositing first passivation layers; performing spin-coating for liquid insulating materials to fill the liquid insulating materials in the isolation trenches among the light-emitting units and forming a flat film on the surface of a chip; curing the liquid insulating materials at a high temperature; etching the film formed by the insulating materials so as to expose the passivation layers on surfaces of the light-emitting units and enabling surfaces, which are positioned at the isolation trenches, of the insulating materials to be flush with surfaces of the passivation layers; depositing second passivation layers to seal parts, which are positioned at the isolation trenches, of the insulating materials in the passivation layers; and etching the passivation layers and manufacturing electrode grooves; depositing metal, manufacturing the electrodes by a lift-off technology and manufacturing connecting bridges of the electrodes on upper surfaces of the passivation layers. The method has the advantages the electrode bridging yield is increased, and the method is applicable to light-emitting unit structures with rectangular, regularly trapezoidal or reversely trapezoidal cross sections, and is particularly applicable to isolation trenches with high depth-to-width ratios.

Description

technical field [0001] The invention relates to the field of large-sized LED chips with a plurality of light-emitting units isolated by deep trenches, in particular to an electrode bridging method for the LED light-emitting units isolated by deep trenches. Background technique [0002] With the development of the semiconductor lighting industry, high-power LED chips have become the mainstream of technology research and development. In order to avoid excessive current density in the light-emitting layer of the high-power LED chip, the method of increasing the area of ​​the light-emitting layer of the chip can be adopted, that is, use a large-sized LED chip. However, the larger the size of a single LED chip, the more difficult it is to distribute the current density of the light-emitting layer uniformly, which makes the effective light-emitting area of ​​the unoptimized large-size LED chip smaller and reduces the current injection efficiency of the chip. In addition, the larg...

AI Technical Summary

Problems solved by technology

Because CMP inevitably causes physical damage to the semiconductor material on the surface of the light-emitting unit, the electrical and optical properties of the LED chip are reduced to a certain extent.

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