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Patterned substrate and stacked light emitting diode

A light-emitting diode, patterned technology, applied in chemical instruments and methods, from chemically reactive gases, crystal growth, etc.

Inactive Publication Date: 2013-07-31
LEXTAR ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of this, the present invention provides a patterned substrate for forming a better-quality epitaxial layer and a stacked light-emitting diode structure with a better-quality epitaxial layer to solve the above-mentioned undesired defects

Method used

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  • Patterned substrate and stacked light emitting diode
  • Patterned substrate and stacked light emitting diode
  • Patterned substrate and stacked light emitting diode

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Embodiment Construction

[0038] The following will pass Figure 1-Figure 27 To illustrate the fabrication of stacked LED structures according to various embodiments of the present invention.

[0039] Figure 1-Figure 5 It is a schematic diagram of fabrication of a stacked LED structure according to an embodiment of the present invention. Please refer to figure 1 Firstly, a substrate 100 with a flat surface is provided, such as a sapphire substrate, which has a top surface 102, which is essentially a flat surface. The substrate 100 may include materials such as sapphire, silicon, and silicon carbide. Next, through the application of a suitable patterned mask (not shown), using lithography to define the etching area, and then performing an etching process (not shown) to partially remove portions of the substrate 100 from the top surface 102, and then forming on the substrate 100 A plurality of separated islands 100a. The separated islands 100a define a plurality of spaced apart recessed structures ...

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Abstract

The present invention provides a patterned substrate and a stacked light emitting diode. The patterned substrate includes: a substrate having a (0001) crystal plane and a plurality of alternatively arranged recess structures therein, thereby forming a plurality of alternatively arranged top surfaces; and a dielectric barrier layer covering the bottom surface and / or the sidewalls of the recess structures. Each of the alternatively arranged recess structures includes a bottom surface and a plurality of sidewalls surrounding the bottom surface.

Description

technical field [0001] The present invention relates to semiconductor structures and fabrication methods thereof, and in particular to a patterned substrate and stacked LED structures for forming epitaxial layers with better quality. Background technique [0002] Light-emitting diodes are light-emitting semiconductor components that have been widely used in recent years. They have the characteristics of low power consumption, low pollution, and long service life, such as traffic lights, large outdoor billboards, and backlights for displays. [0003] At present, many advanced semiconductor electronic devices and optoelectronic devices are made by stacked epitaxial growth, and the substrate is one of the elements for growing semiconductor structures. When the lattice constants of the substrate and the epitaxial layer are more mismatched, the subsequent growth The difference in stress between the epitaxial layer and the substrate greatly affects the defect density in the epitax...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20H01L33/00
CPCH01L33/02C30B25/18H01L29/1608C30B29/06C30B15/00H01L29/04H01L29/12H01L33/007
Inventor 周秀玫陈俊荣叶昭呈
Owner LEXTAR ELECTRONICS CORP
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