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Method for manufacturing vertical multi-junction solar cell piece by laser

A technology of solar cells and vertical multi-junctions, which is applied in the manufacture of circuits, electrical components, and final products, and can solve the problems of numerous processes, complex processes, and high processing costs

Active Publication Date: 2013-07-24
NANJING TRIZ INST OF LASER APPL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, multi-junction solar cells need to be produced by etching or chemical vapor deposition process, which has many procedures, complicated process and high processing cost.

Method used

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  • Method for manufacturing vertical multi-junction solar cell piece by laser
  • Method for manufacturing vertical multi-junction solar cell piece by laser
  • Method for manufacturing vertical multi-junction solar cell piece by laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Sample: Intrinsic single crystal silicon wafer.

[0042] Impurity atmosphere used: Phosphine (PH 3 ) gas (n-type), diborane (B 2 h 6 ) gas (p type), pressure 0.1bar.

[0043] Processing parameters: laser wavelength 790nm, repetition frequency 1kHz, pulse width 150fs, focusing objective lens 4 magnification 10, platform moving speed 100μm / s, doped stripe width 100μm, doped stripe intrinsic area width 300μm.

[0044] The specific steps are:

[0045] 1. Make the thickness 200μm and the area 50×50mm 2 The intrinsic single crystal wafer (1) is placed in the center of the vacuum chamber (2), and the semiconductor material (1) is rotated so that the X direction and Y direction of the three-dimensional mobile platform are parallel to the oriented side of the semiconductor material; the semiconductor material is fixed; as figure 1 shown;

[0046] 2. Close the inlet valve 7, open the outlet valve 9, connect the outlet 8 to a vacuum pump (not shown in the figure), vacuumize ...

Embodiment 2

[0054] The laser wavelength is 532nm, the repetition frequency is 500kHz, the pulse width is 100ps, the laser power is 2W, the magnification of the focusing objective lens is 4, the moving speed of the platform is 1mm / s, the width W of the doped stripe is 50μm, and the width of the intrinsic region of the doped stripe is W i 0μm, the thickness of the silicon wafer is 200μm, and the area is 50×50mm 2 monocrystalline silicon wafers. The impurity atmosphere used is diborane (B 2 h 6 ) gas (p-type).

[0055] The specific steps are the same as in Embodiment 1, except that the moving length S is 100 mm, the translation distance of two adjacent linear movements is 15 μm, and the period of the doped stripe sequence is 150 μm. The rear electrode grooves have a width of 70 μm and a depth of 100 μm.

Embodiment 3

[0057] The laser wavelength is 1064nm, the repetition frequency is 500kHz, the pulse width is 100ps, the laser power is 5W, the magnification of the focusing objective lens is 20, the moving speed of the platform is 10mm / s, the width of the doped stripe is 5μm, and the width of the intrinsic region of the doped stripe is 50μm. The silicon wafer is 200μm in thickness and 50×50mm in area 2 n-type intrinsic polysilicon wafer. The impurity atmosphere used is phosphine (PH 3 ) gas (n-type) and diborane (B 2 h 6 ) gas (p-type).

[0058] The specific steps are the same as in Example 1, except that each doped stripe is formed by one scan, the moving length S is 500 mm, the translation distance of two adjacent linear movements is 10 μm, and the period of the doped stripe sequence is 120 μm. The width of the rear electrode groove is 10 μm and the depth is 50 μm.

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Abstract

The invention relates to a method for manufacturing a vertical multi-junction solar cell piece by laser. The method comprises the following steps of placing a semiconductor material in a vacuum chamber installed with a transparent window, wherein the vacuum chamber is installed in a three-dimensional mobile platform; selectively doping in an area to the semiconductor material in impurity atmosphere by laser to form a p type or n type doped stripe sequence, wherein the depletion layer plane of the formed p-n junction or p-i-n junction sequence is vertical to lighting face; and manufacturing the vertical multi-junction solar cell piece by etching an electrode groove on the back. The invention provides a cheap and simple full laser manufacturing process for the vertical multi-junction solar cell piece.

Description

technical field [0001] The present invention relates to a solar cell, in particular to a method for making a vertical multi-junction solar cell by laser, in particular to forming a p-n junction or interlaced p-type layer and an n-type layer in a semiconductor material by laser selective doping Solar cells with p-i-n junction sequence. Background technique [0002] The plane of the depletion layer of traditional solar cells based on p-n junction or p-i-n junction is parallel to the light surface, and the contact electrodes are located on the upper and lower surfaces of the battery. The carriers must flow through the thin layer on the surface of the battery to be collected by the electrodes. resistance, which reduces the carrier collection efficiency. The series resistance of the photovoltaic cell with this structure will increase, which is more serious under strong light intensity (about more than 50 suns), and the contact electrode on the incident surface increases the shad...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 赵全忠董明明
Owner NANJING TRIZ INST OF LASER APPL TECH CO LTD
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