Processing method of four-mass-block silicon micro-electromechanical gyro structure mechanism
A technology of silicon micro-electromechanical gyroscope and four-mass block, which is applied in the direction of microstructure technology, microstructure device, manufacturing microstructure device, etc., can solve the problems of large residual stress, difficult to develop clean, metallization, etc., and achieve improved side wall Perpendicularity, solve the different thermal expansion coefficients, and ensure the effect of line quality
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[0084] The specific implementation manner of the present invention will be described below according to the accompanying drawings.
[0085] A method for processing a four-mass silicon micro-electromechanical gyro structure, comprising the steps of:
[0086] Step 1: Process the lower cap
[0087] Step 1.1 Clean the lower capping substrate
[0088] as attached Figure 4 As shown, the SOI substrate is first cleaned before processing the lower cap, and the substrate includes a lower cap device layer 30a, a lower cap insulating layer 30b and a lower cap support layer 30c, wherein the lower cap device layer 30a is Si, P-type doping, (111) crystal orientation, thickness of 60-80 μm, lower sealing cap insulating layer 30b is SiO 2 , with a thickness of 1-2 μm, the lower sealing cap support layer 30c, p-type doped, (111) crystal orientation, with a thickness of 400-500 μm. The cleaning process is as follows: the first step is to use SC-1 (NH 4 OH:H 2 o 2 :H 2 (O=1:1:5, volume r...
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