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Gold and Fe Doped Negative Temperature Coefficient Single Crystal Silicon Thermistors

A technology of negative temperature coefficient and thermistor, which is applied to resistors with negative temperature coefficient and other directions to achieve the effect of simple preparation process

Active Publication Date: 2016-01-20
XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The main reports on the research related to the preparation of heat-sensitive materials by doping single crystal silicon are: In 1983, Toshiba Corporation of Japan developed a gold-doped silicon thermistor, and obtained a material B value of 4300K; Chinese patent 85102901. Sensitive resistor and manufacturing method, obtained material B value of 6000K; Chinese patent 87103486.3 gold-doped, platinum-doped single crystal silicon thermistor, obtained material B value of 3850K; Chinese patent 200410092027.4 A zinc-doped negative temperature coefficient single crystal silicon thermistor Thermistor and its preparation method, the material B value is 3000-6350; Chinese patent 200710180002.3 transition metal multiple doping negative temperature coefficient single crystal silicon thermistor, the material B value is 4300-4500K; Chinese patent 200810072972.6 gold and nickel doped single Crystalline silicon chip-type negative temperature coefficient thermistor and its preparation method, the B value of the material obtained is 4750-6000K; there is no research related to the preparation of thermistor materials by doping two deep-level impurities of gold and iron in single crystal silicon to report

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] a. Using an N-type (111) single crystal silicon wafer with an initial resistivity of 1 Ω cm and a thickness of 320 μm, first place the silicon wafer in deionized water and ultrasonically clean it for 3 minutes, then ultrasonically clean it in acetone for 5 minutes, and then wash it in methanol solution Ultrasonic cleaning in medium for 5min, deionized water cleaning, and then in NH 3 ·H 2 O:H 2 o 2 :H 2 Wash in O=1:2:5 (APM) solution for 15 minutes, keep the temperature of APM solution at 75±2°C, wash with cold and hot deionized water for 3 times, and then use 0.5%HF and 10%H 2 o 2 Soak in the mixed solution for 2 minutes, and finally soak in 2.0% HF solution for 2 minutes, wash with hot and cold deionized water for 3 times, and set aside;

[0025] b, the chloroauric acid and ferric chloride were dissolved in absolute ethanol respectively to prepare a concentration of 3.88 × 10 -5 mol / ml chloroauric acid ethanol solution and the concentration is 4.62×10 -6 mol / ml...

Embodiment 2

[0031] a. Using an N-type (111) single crystal silicon wafer with an initial resistivity of 1 Ω cm and a thickness of 320 μm, first place the silicon wafer in deionized water and ultrasonically clean it for 3 minutes, then ultrasonically clean it in acetone for 5 minutes, and then use methanol solution Ultrasonic cleaning in medium for 5min, deionized water cleaning, and then in NH 3 ·H 2 O:H 2 o 2 :H 2 Wash in O=1:2:5 (APM) solution for 15 minutes, keep the temperature of APM solution at 75±2°C, wash with cold and hot deionized water for 4 times, and then use 0.5%HF and 10%H 2 o 2 Soak in the mixed solution for 2 minutes, and finally soak in 2.0% HF solution for 2 minutes, wash with hot and cold high-purity water 4 times, and set aside;

[0032] b, the chloroauric acid and ferric chloride were dissolved in absolute ethanol respectively to prepare a concentration of 3.88 × 10 -5 mol / ml chloroauric acid ethanol solution and the concentration is 5.31×10 -4 mol / ml ethanol ...

Embodiment 3

[0038] a. Using an N-type (111) single crystal silicon wafer with an initial resistivity of 1 Ω cm and a thickness of 320 μm, first place the silicon wafer in deionized water and ultrasonically clean it for 3 minutes, then ultrasonically clean it in acetone for 5 minutes, and then wash it in methanol solution Ultrasonic cleaning in medium for 5min, deionized water cleaning, and then in NH 3 ·H 2 O:H 2 o 2 :H 2 Wash in O=1:2:5 (APM) solution for 15 minutes, keep the temperature of APM solution at 75±2°C, wash with cold and hot deionized water for 5 times, and then use 0.5%HF and 10%H 2 o 2 Soak in the mixed solution for 2 minutes, and finally soak in 2.0% HF solution for 2 minutes, wash with hot and cold deionized water for 5 times, and set aside;

[0039] b, the chloroauric acid and ferric chloride were dissolved in absolute ethanol respectively to prepare a concentration of 3.88 × 10 -5 mol / ml chloroauric acid ethanol solution and concentration is 6.94×10 -4 mol / ml eth...

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Abstract

The invention relates to a gold-and-iron-doped monocrystal silicon thermistor with a negative temperature coefficient. The thermistor takes metal salts of gold and iron as diffusion sources, an open-tube source coating type high-temperature gas phase diffusion method is adopted to diffuse two impurities, namely gold and iron, into N-type monocrystal silicon, a monocrystal silicon thermo-sensitive material is prepared by using the property that gold and iron form a compensation energy level in the silicon, and the monocrystal silicon thermistor with high B value and negative temperature coefficient is prepared by chemically plating a nickel electrode, scribing and packaging. The obtained thermistor is subjected to electrical property test, and the electrical parameters of the thermistor are as follows: R 25 DEG C = 84 kilohm - 129 kilohm, and B 25 DEG C / 50 DEG C = 6240K - 6680K.

Description

technical field [0001] The invention relates to the preparation of a gold and iron doped single crystal silicon negative temperature coefficient thermistor, which belongs to the field of semiconductor sensors. Background technique [0002] Sensitive components and sensors are one of the three pillars of the electronic information industry determined by the state, and are considered to be the most promising electronic technology products. Thermistors are widely used in household appliances, industrial production equipment, and weather forecasting due to their high sensitivity, high reliability, and low price. [0003] At present, the sensitive materials commonly used in thermistors are mainly oxide thermosensitive ceramics. According to the inherent laws of polycrystalline oxide semiconductors, the material constant B value is closely related to its resistivity, showing a positive correlation characteristic. Therefore, the application of oxide It is difficult to achieve high...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/04
Inventor 范艳伟周步康陈朝阳王军华
Owner XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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