Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Vapor plating method for organic light-emitting display

An evaporation and organic technology, applied in the field of evaporation of organic light-emitting displays, can solve the problem of inability to reach the substrate, and achieve the effect of low power consumption and high resolution

Inactive Publication Date: 2013-07-17
KUN SHAN POWER STENCIL
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] The technical problem to be solved by the present invention is that in the existing OLED manufacturing technology, the organic particles cannot reach the substrate due to the shielding of the opening wall during evaporation, and a new evaporation method for organic light-emitting diodes is provided, which has the advantages of The advantages of high utilization rate of organic materials, high film formation rate, long service life of mask plate and cost saving

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vapor plating method for organic light-emitting display
  • Vapor plating method for organic light-emitting display
  • Vapor plating method for organic light-emitting display

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] A 50 μm thick trench mask for evaporation, in the shape of a quadrilateral metal plate, including the ITO surface in contact with the indium tin oxide (ITO) surface and the evaporation surface, the mask has a through ITO Several grooves on the surface and the evaporation surface, the openings of the grooves on both surfaces are groove-shaped openings, and the groove-shaped openings are spaced from each other at a certain distance and parallel to each other; the opening area of ​​the groove-shaped openings on the ITO surface is less than Opening area on the evaporation surface.

[0044] Invar alloy is selected as the mask material, and the etching process is used to form half-cut from the ITO surface of the mask, such as Figure 5 222 grid-like openings, 222 depth is 15 μm, 222 is connected by solid bridge 333 in the longitudinal direction, 222 has a lateral dimension of 70 μm; etched from the evaporation surface 5 of the mask to form as Figure 4 111 has a long and nar...

Embodiment 2

[0048] A trench mask for evaporation, the transverse section is as figure 2 As shown, the thickness is 150 μm, and the shape is a quadrilateral metal plate, including the ITO surface 4 and the evaporation surface 5 in contact with the indium tin oxide (ITO) surface, and the mask has a groove through the ITO surface and the evaporation surface , the size of the opening 1 of the trench on the ITO surface is smaller than the size of the opening 2 on the evaporation surface. Invar alloy is selected as the mask material, and the double-sided etching process is adopted. image 3 It is a schematic diagram of the cooperation between the mask plate and the ITO surface.

[0049] 4 etch from the ITO side of the mask to form as figure 2 Opening 1 on the ITO surface of the middle mask, the depth of opening 1 is 45 μm, and the lateral dimension is 70 μm, etched from the evaporation surface 5 of the mask to form figure 2 Opening 2 on the evaporation surface, and ensure that the center ...

Embodiment 3

[0052] A trench mask plate for evaporation, with a thickness of 100 μm, shaped as a quadrilateral metal plate, including two surfaces of an ITO surface and an evaporation surface, the mask plate has a groove penetrating the ITO surface and the evaporation surface, and the groove The size of the openings on the ITO side is smaller than the size of the openings on the evaporation side.

[0053] The trench mask for evaporation is a quadrilateral nickel-cobalt alloy metal plate, the ITO surface opening depth of the mask is 25 μm, and the lateral dimension is 50 μm. The opening on the evaporation surface coincides with the center of the ITO surface opening of the template, and the evaporation The center of the opening on the surface is symmetrical, the depth is 75 μm, and the lateral dimension is 100 μm, and the opening hole wall on the evaporation surface has a certain concave curvature, forming an evaporation angle of 30°. By separately controlling the etching time of the ITO sur...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a vapor plating method for an organic light-emitting display, and aims to mainly solve the technical problem that organic particles cannot reach a substrate due to shadowing of a mask plate aperture wall during vapor plating in the existing OLED (organic light-emitting diode) manufacturing technologies. The invention employs a vapor plating method of OLED, and the method includes the steps of: combining the ITO (indium tin oxide) surface of a mask plate with an ITO semiconductor glass surface, making the vapor plating surface of the mask plate correspond to an organic vapor plating source; vaporizing an?organic material, and making the organic material attached to the ITO semiconductor glass surface through through-holes on the mask plate; and separating the mask plate and the ITO semiconductor glass, thus completing vapor plating. Specifically, the mask plate is equipped with apertures running through the ITO surface and the vapor plating surface, and the size of the apertures on the ITO surface is smaller than that on the vapor plating surface. According to the technical scheme, the problem is well solved. Thus, the method can be used in the industrial production of organic light-emitting diodes.

Description

[0001] technical field [0002] The invention relates to an evaporation method for organic light-emitting diodes in the OLED manufacturing process. [0003] Background technique [0004] Generally, an OLED device is an emissive display device that emits light by electrically exciting a fluorescent organic compound. The OLED device can be regarded as a passive matrix OLED (PMOLED) device or an active matrix OLED (AMOLED) device according to a driving manner of N×M pixels that can be arranged in a matrix. Compared with PMOLED devices, AMOLED devices are suitable for large-sized displays due to their low power consumption and high resolution. [0005] Depending on the direction in which light is emitted from the organic compound, the OLED device can be a top-emitting OLED device, a bottom-emitting OLED device, or a top and bottom-emitting OLED device. Top-emitting OLED devices emit light in the opposite direction to the substrate on which the pixels are disposed and, unlike ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/12C23C14/04
Inventor 魏志凌高小平潘世弥郑庆靓
Owner KUN SHAN POWER STENCIL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com