Light-emitting diode (LED) power source with inversed LED chip and method for producing LED power source with inversed LED chip

Abstract

The invention discloses a light-emitting diode (LED) power source with an inversed LED chip and a method for producing the LED power source with the inversed LED chip. The LED power source with the inversed LED chip provided by the invention comprises the LED chip and a base plate, wherein the LED chip comprises a transparent substrate, an N-type coating, an active layer, a P-type coating and a transparent conducting thin film which are sequentially superposed together; an N-type electrode pad is arranged in an exposed area of the N-type coating, and a metal salient point is arranged on the N-type electrode pad; a P-type electrode pad is arranged on the transparent conducting thin film, and a metal salient point is arranged on the P-type electrode pad; the base plate is a transparent base plate, and metal bosses, and a positive electrode and a negative electrode which are used for being connected with an external circuit are arranged on the base plate; and the metal salient points on the N-type electrode pad and the P-type electrode pad are respectively and correspondingly connected with the metal bosses on the base plate, and an encapsulation glue is also arranged on the base plate and covers the LED chip. The light-emitting efficiency of the chip is increased, the chip structure is simplified, and the production technological complexity of the chip is lowered.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to an LED light source with flip-chip LED chips and a manufacturing method thereof. Background technique [0002] Gallium nitride-based LED chips have been widely used in many fields such as lighting, indication, display and backlight. For LED chips prepared using sapphire substrates, since sapphire is a non-conductive insulator, the positive and negative electrodes of the LED chip must be prepared on the same side of the chip. see figure 1 , the conventional front-mount LED chip structure is to grow gallium nitride-based quantum well 140 semiconductor material on sapphire substrate 110 . The N-type GaN layer 130 is etched to form an exposed area. Then, a transparent conductive film 160 is formed on the P-type GaN layer 150 as a current spreading layer and a light-transmitting layer. [0003] For the GaN-based LED chip, the transparent conductive film 160 is made of Ni / Au material....

AI Technical Summary

Problems solved by technology

For the structure of NiO / Au-based multilayer film plus Ag film or Al film with high reflectivity, most of the reflected light is also absorbed due to the low light transmittance of NiO / Au-based multilayer film, making it reflective. The increase is also not obvious

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