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Light-controlled TeraHertz wave switch

A technology of switching and laser beams, which is applied in the field of terahertz wave applications, can solve the problems of high-control laser optical power switching operation, etc., and achieve the effects of laser optical power reduction, laser optical power sensitivity, and high switch extinction ratio

Inactive Publication Date: 2015-02-25
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current monolithic optically controlled terahertz wave switch requires high control laser light power to realize the switching operation.

Method used

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  • Light-controlled TeraHertz wave switch
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  • Light-controlled TeraHertz wave switch

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Embodiment Construction

[0029] Such as figure 2 As shown, the optically controlled terahertz wave switch of the present invention includes a semiconductor substrate 1 , an air layer 2 and a defect layer 3 . The number of semiconductor substrates is 2n, n is an integer and n≥2. Wherein, the two sides of defect layer 3 are provided with the same number of semiconductor substrates 1, and the adjacent semiconductor substrates 1 on the same side of defect layer 3 are separated by support ring 4 to form air layer 2; defect layer 3 Made of air.

[0030] As a preferred embodiment of the present invention, there are 6 semiconductor substrates 1 in total, which are made of high-resistance silicon wafers, and the selected silicon wafers have a resistivity R>4000Ω·cm and a thickness of 500 μm. The semiconductor substrate 1 can also use a gallium arsenide or indium phosphide substrate instead of a high-resistance silicon silicon wafer; the thickness of the semiconductor substrate 1 can be selected other than 5...

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Abstract

The invention discloses a light-controlled TeraHertz wave switch which comprises semiconductor substrates, air layers and a flaw layer. The number of the semiconductor substrates is 2*n, wherein the n is an integer larger than or equal to 2. The semiconductor substrates are arranged on two sides of the flaw layer, wherein the semiconductor substrates on the two sides of the flaw layer have the same quantity. The adjacent semiconductor substrates on the same side of the flaw layer are divided through support rings to form the air layers. The flaw layer is composed of the air. The switch on and switch off of the TeraHertz wave switch can be achieved through controlling existing of laser irradiating to one of semiconductor substrates, wherein one of the semiconductor substrates is closest to the flaw layer and faces towards the surface of the flaw layer. High switch extinction ratio can be achieved under low laser luminous power for controlling, and the requirements of application in fields such as TeraHertz wave imaging, TeraHertz wave spectrum tests and TeraHertz wave communication can be met. The light-controlled TeraHertz wave switch can also be used as a TeraHertz wave modulator.

Description

technical field [0001] The invention relates to a light-controlled terahertz wave switch, belonging to the field of terahertz wave applications. Background technique [0002] Terahertz (THz, 1THz=1×10 12 Hz) waves lie between microwaves and infrared radiation in the electromagnetic spectrum, and their frequency ranges from 0.1 to 10 THz. Terahertz waves occupy a special position in the electromagnetic spectrum, and have a series of superior properties such as perspective and safety. The unique properties of terahertz waves have great scientific value and broad application prospects in basic research fields such as physics, chemistry, information, and biology, as well as in technical fields such as materials, communications, and national security. [0003] At present, terahertz wave functional devices are the focus and difficulty in the application of terahertz wave science and technology. Existing terahertz wave functional devices are usually complex in structure, large in...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/01H01P1/10
Inventor 洪治陈涛刘建军刘平安
Owner CHINA JILIANG UNIV
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