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Preparation method of 6LiF conversion film used for 4H-SiC-based semiconductor neutron detector

A neutron detector and semiconductor technology, which is applied in the field of preparation of 6LiF conversion thin films for 4H-SiC-based neutron detectors, can solve the problems of complex deposition process, difficult control of film thickness, and inability to meet high-efficiency neutron detectors.

Inactive Publication Date: 2013-06-05
INST OF NUCLEAR PHYSICS & CHEM CHINA ACADEMY OF +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the deposition process of PEVCD technology is complicated, the film thickness is not easy to control, and the reactants must be continuously replenished and the residues after the reaction must be dealt with during deposition, which cannot meet the application of today's high-efficiency neutron detectors.

Method used

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  • Preparation method of 6LiF conversion film used for 4H-SiC-based semiconductor neutron detector
  • Preparation method of 6LiF conversion film used for 4H-SiC-based semiconductor neutron detector
  • Preparation method of 6LiF conversion film used for 4H-SiC-based semiconductor neutron detector

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Embodiment 1

[0028] The 4H-SiC based neutron detector of the present embodiment is used 6 LiF conversion film preparation process is as follows:

[0029] a. Put the substrate material 4H-SiC matrix into acetone and absolute ethanol in sequence for 20 minutes of ultrasonic cleaning, take out and dry after fully cleaning;

[0030] b. Use the single crystal 4H-SiC substrate after cleaning in step a as the magnetron target 6 Li concentration of 95% 6 The LiF target is placed in the vacuum chamber of the reactive magnetron sputtering coating vacuum furnace, and then evacuated to 5.0×10 -4 Pa, the impurities in the single crystal 4H-SiC substrate are removed by bias reverse sputtering cleaning, the power of reverse sputtering cleaning is 100W, and the bias voltage is -500V; pre-sputtering cleaning is used to remove impurities 6 The impurity of LiF target material, the power of pre-sputter cleaning is 100W, and the bias voltage is -100V; the starting gas of reverse sputter cleaning and pre-spu...

Embodiment 2

[0035] The 4H-SiC based neutron detector of the present embodiment is used 6 The LiF conversion film preparation process is basically the same as in Example 1, the difference is that the magnetron 6 LiF target 6 The concentration of Li is 85%, and the reactive magnetron sputtering coating vacuum furnace is evacuated to 4.0×10 -4 Pa, the power of reverse sputter cleaning is 80W, the bias voltage is -400V; the power of pre-sputter cleaning is 80W, the bias voltage is -100V, the flow rate of argon gas is 150Sccm, the operation vacuum of reverse sputter cleaning and pre-sputter cleaning The pressure is 1.0Pa absolute pressure. The power of sputtering deposition is 100W, the flow rate of argon gas is 120Sccm, and the vacuum absolute pressure of sputtering deposition operation is 0.40Pa; 6 The operation process of sputtering deposition of LiF coating is a continuous operation process. sputter deposition 6 The thickness of the LiF coating is 1 μm, and the vacuum degree in the re...

Embodiment 3

[0037] in deposition 6 During the LiF conversion film process, the deposition power has a great influence on the thickness, uniformity and structure of the conversion film. This embodiment 6 Coating equipment and other process conditions used for the preparation of LiF conversion film are all the same as in Example 1, and keep 6 LiF conversion film thickness 5μm controllable, deposition 6 Change the deposition power when converting LiF film, if selected as 80W, 100W and 150W, it can 6 The deposition rate control of the LiF conversion film can also meet the requirements of precise and controllable thickness, and the prepared conversion film layer can also be passed 6 Li(n,α) 3 The α and T particle energy spectra generated by the H reaction test the intensity information of the incident neutrons.

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Abstract

The invention discloses a preparation method of a 6LiF conversion film used for a 4H-SiC-based semiconductor neutron detector. The preparation method mainly includes the following steps: a single-crystal 4H-SiC matrix is respectively immersed in acetone and absolute ethyl alcohol for ultrasonic cleaning; impurities in the single-crystal 4H-SiC matrix are removed by using of the method of unsymmetrical pressure anti-sputter-cleaning, and impurities of 6LiF target material are removed by using of the method of pre-sputter-cleaning; the 6LiF target material is used as a magnetic-control target, and a 6LiF coating is deposited on the single-crystal 4H-SiC matrix in a sputtered mode; argon is used as luminance build-up gas for the sputtering cleaning and the sputtering deposition; and the sputtering deposition is controlled by magnetism so that the thickness of the 6LiF coating can reach a designed thickness, the vacuum degree in a reaction magnetron sputtering coated vacuum furnace is adjusted to not less than 10<-3>Pa, the 6LiF coating is discharged from the furnace after natural cooling, and then the 6LiF coating conversion film deposited on the 4H-SiC matrix is obtained. The obtained 4H-SiC / 6LiF conversion film has the advantages of being small in size, high in detection efficiency, irradiation-damage-resisting, heat-resisting, strong in n / gamma screening capacity and the like, preparation technology is simple in operation, and the thickness of the 6LiF conversion film can be controlled.

Description

technical field [0001] The invention belongs to the application field of neutron detection technology, and relates to a novel small-volume and high-efficiency 4H-SiC-based neutron detector for measuring incident neutron intensity 6 LiF conversion film preparation process. Background technique [0002] Today, with 3 The scarcity of He resources and the increasing demand for research on new high-efficiency neutron detectors have led to the rapid development of semiconductor detectors that are small, simple, and can still work normally under low bias voltage. and other probes such as 3 Compared with He gas counter tube), semiconductor detectors have lower bias voltage, faster charge collection time and smaller size, so they are useful in monitoring and controlling nuclear reactor power, protecting nuclear materials, monitoring environmental radiation intensity and detecting nuclear fuel More attractive in fuel consumption neutron monitoring. Nuclear Instruments and Methods ...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06G01T3/08
Inventor 蒋勇刘波范晓强吴健雷家荣李勐
Owner INST OF NUCLEAR PHYSICS & CHEM CHINA ACADEMY OF
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