Method for preparing bismuth vanadate solar cell on glass substrate

A technology for solar cells and glass substrates, which is applied in the manufacture of circuits, electrical components, and final products. It can solve problems that limit the large-scale application of BVO thin films, reduce costs and environmental protection, and complicate the preparation of solid-phase methods to achieve superior photovoltaic performance. , Conducive to environmental protection, good effect of photovoltaic effect

Inactive Publication Date: 2013-05-15
SHANGHAI JIAO TONG UNIV
View PDF1 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the preparation methods of BVO thin films mainly include solid-phase method and chemical solution deposition method, but the preparation of solid-phase method is more complicated and prone to impurity, and the chemical solution deposition method has the characteristics of simple preparation process and low cost, but the current BVO thin film Chemical solution deposition technology is accompanied by the use of high-cost vanadyl acetylacetonate or strong acid, which is not conducive to reducing costs and environmental protection, thus limiting the large-scale application of BVO thin films
[0004] So far, no one has developed a low-cost and environmentally friendly method for preparing BVO thin films and their solar cells on glass substrates

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing bismuth vanadate solar cell on glass substrate
  • Method for preparing bismuth vanadate solar cell on glass substrate
  • Method for preparing bismuth vanadate solar cell on glass substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Bi(NO 3 ) 3 ·5H 2 O and NH 3 VO 3 (Molar ratio according to Bi:V=1:1) was dissolved in DMF with the assistance of citric acid, acetic acid and ethanolamine in proportion to obtain a dark blue and stable precursor solution. Films were then prepared by the gel-spin method. The condition of glue rejection is as follows: 10 seconds at 500 rpm and 30 seconds at 3000 rpm. After spinning the glue, dry the substrate with the precursor wet film on a hot plate at 350°C for 1 to 3 minutes, and finally dry it in O 2 Sintering at 480° C. for 5 minutes in a rapid annealing furnace under atmosphere. After the first layer is calcined, the first layer is annealed once, and then each layer is annealed once, and a total of 8 layers of glue are thrown to obtain the BVO film.

[0026] The prepared thin film was shielded by a mask with a hole of 1 mm × 0.5 mm, and a 1 mm × 0.5 mm Au upper electrode was deposited on the film surface by physical sputtering.

Embodiment 2

[0028] Bi(NO 3 ) 3 ·5H 2 O and NH 3 VO 3 (Molar ratio according to Bi:V=1:1) was dissolved in DMF with the assistance of citric acid, acetic acid and ethanolamine in proportion to obtain a dark blue and stable precursor solution. Films were then prepared by the gel-spin method. The condition of glue rejection is as follows: 10 seconds at 500 rpm and 30 seconds at 3000 rpm. After spinning the glue, dry the substrate with the precursor wet film on a hot plate at 350°C for 1 to 3 minutes, and finally dry it in O 2 Sintering at 500° C. for 5 minutes in a rapid annealing furnace under atmosphere. After calcination of the first layer of glue, anneal once, and anneal once for each layer after that, a total of 8 layers of glue are thrown, and the BVO film is obtained.

[0029] The prepared thin film was shielded by a mask with a hole of 1 mm × 0.5 mm, and a 1 mm × 0.5 mm Au upper electrode was deposited on the film surface by physical sputtering.

Embodiment 3

[0031] Bi(NO 3 ) 3 ·5H 2 O and NH 3 VO 3 (Molar ratio according to Bi:V=1:1) was dissolved in DMF in proportion and with the assistance of citric acid, acetic acid and ethanolamine to obtain a dark blue and stable precursor solution. Films were then prepared by the gel-spin method. The condition of glue rejection is as follows: 10 seconds at 500 rpm and 30 seconds at 3000 rpm. After spinning the glue, dry the substrate with the precursor wet film on a hot plate at 350°C for 1 to 3 minutes, and finally dry it in O 2 Sintering at 520° C. for 5 minutes in a rapid annealing furnace under atmosphere. After calcination of the first layer of glue, anneal once, and anneal once for each layer after that, a total of 8 layers of glue are thrown, and the BVO film is obtained. The prepared thin film was shielded by a mask with a hole of 1 mm × 0.5 mm, and a 1 mm × 0.5 mm Au upper electrode was deposited on the film surface by physical sputtering.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for preparing a bismuth vanadate (BiVO4) solar cell on a fluorine-doped tin oxide (FTO) glass substrate. The method includes preparing precursor solution and preparing a monoclinic polycrystalline bismuth vanadate thin film. The glass substrate is utilized as a substrate, the BiVO4 oxide thin film in a perovskite structure is prepared through a chemical solution deposition method, then electrodes are prepared on the thin film through a physical sputtering method, and therefore the BiVO4 solar cell is obtained. Compared with the prior art, the method for preparing the BiVO4 solar cell on the FTO glass substrate can be used for preparing the perovskite-structure BiVO4 thin film which is high in consistency and good in repeatability at low cost. The thin film has good photovoltaic properties and the unidirectional conductive property of a diode, can meet the requirements of microelectronic devices and photoelectric devices on semiconductor materials, and has a significant promoting role in the preparation technology of bismuth vanadate thin films.

Description

technical field [0001] The invention belongs to the technical field of film deposition and solar cell preparation, and in particular relates to a method for preparing a bismuth vanadate thin film solar cell on a glass substrate by a chemical solution deposition method. Background technique [0002] As a clean and renewable energy source, solar energy has gradually become a major research hotspot in recent years. Photovoltaic power generation is an effective way to utilize solar energy, and it is the fastest growing, most dynamic and most eye-catching research field in recent years. With people's emphasis on the use of solar energy and the development of solar technology, the research and development of photovoltaic semiconductor materials has become a hot topic. Photovoltaic materials are developing in the direction of process simplification and low cost. [0003] Bismuth vanadate (chemical formula BiVO 4 , referred to as BVO) thin films have been widely used in the field...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/18
CPCY02P70/521Y02P70/50
Inventor 郭益平董文刘河洲李华陶文燕康红梅
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap