Chemical mechanical lapping device and system

Abstract

The invention provides a chemical mechanical lapping device and a system. The chemical mechanical lapping device comprises a wafer supporting seat, a lapping pad, a lapping pad fixed piece, a shaft lever and a raw material providing device, wherein the wafer supporting seat is used for supporting a wafer to be lapped, and a surface to be lapped of the wafer is upward, the lapping pad is arranged on the upper part of the wafer supporting seat, a lapping surface of the lapping pad is downward and is opposite to the surface to be lapped of the wafer, the area of the lapping area of the lapping pad is less than the area of the surface to be lapped of the wafer, the lapping pad fixed piece is fixed on the upper portion of the lapping pad and for fixing the lapping pad, the shaft lever is arranged on the upper part of the lapping pad fixed piece and for driving the lapping pad fixed piece and the the lapping pad to rotate, and the raw material providing device is arranged on the upper part of the wafer supporting seat for providing lapping liquids for the surface to be lapped of the wafer. According to the chemical mechanical lapping device and the system, wafers with diameters of 450mm or more can be lapped simply and accurately.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a chemical mechanical polishing device and system. Background technique [0002] The Chemical Mechanical Planarization (CMP) process is a planarization process. Since it was introduced into the integrated circuit manufacturing process in 1990, after continuous practice and development, it has become a key process to promote the continuous shrinking of the integrated circuit technology node. At present, CMP has been widely used in shallow trench isolation structure planarization, gate electrode planarization, tungsten plug planarization, copper interconnection planarization and other processes. The CMP process is also applied to remove thin film layers on the surface of the substrate. [0003] For related technologies of CMP, reference may be made to US Patent No. US5722875, which discloses a polishing method and apparatus (method and appartus for polishing). [0004] fi...

AI Technical Summary

Problems solved by technology

[0006] 1) The polishing disc 14 is relatively large and takes up a lot of space, and the polishing disc 14 is relatively heavy and difficult to move;

[0007] 2) The layout of the whole grinding machine is very large, and the production cost is high;

[0008] 3) Since the polishing disc 14 is relatively large, the stability of the polishing disc 14 during rotation is difficult to control;

[0009] 4) The grinding fluid 18 needs to be distributed on the grinding pad with an area larger than the wafer, which not only wastes the grinding fluid, but also affects the uniform distribution of the grinding fluid

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