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Preparation method of doped graphene

A graphene and substrate technology, which is applied in the field of graphene preparation by chemical vapor deposition, can solve the problems of high oxygen content in the sample and increase the complexity of the process, and achieve simple process and equipment, easy control of nitrogen doping amount, simple and feasible operation Effect

Inactive Publication Date: 2013-05-08
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Application Information

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Problems solved by technology

The Chinese patent application with the publication number CN 101289181 A discloses a preparation method of doped graphene by chemical vapor deposition, but this method requires the addition of a catalyst, and the catalyst needs to be removed after the preparation, which increases the complexity of the process, and the obtained sample oxygen Excessive content

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preparation example Construction

[0026] A kind of preparation method of doped graphene provided by the present embodiment, such as figure 1 shown, including the following steps:

[0027] (1) drying the metal substrate after cleaning;

[0028] (2) Place the dried substrate in the reaction chamber, and pass a protective gas with a flow rate of 10 to 1000 sccm into the reaction chamber, and keep it for 1 to 60 minutes;

[0029] (3) Subsequently, the reaction chamber is heated to 750-1100° C., and gaseous carbon-containing substances with an air flow rate of 20-1000 sccm and gaseous nitrogen-containing substances with an air flow rate of 10-200 sccm are introduced to react, and the C:N atomic ratio is 2 ~20:1, keep the reaction for 1~300 minutes;

[0030] (4) After the reaction is completed, stop feeding gaseous carbon-containing substances and gaseous nitrogen-containing substances, and stop heating the substrate, stop feeding protective gas after cooling to room temperature, and prepare doped graphene on the ...

Embodiment 1

[0044] A preparation method of doped graphene, comprising the following steps:

[0045] (1) Carry out ultrasonic cleaning to iron foil with deionized water, ethanol and acetone successively and dry;

[0046] (2) The iron foil after drying is arranged in the reaction chamber, and the hydrogen gas with a flow rate of 100ccm is introduced into the reaction chamber, and kept for 50 minutes;

[0047] (3) Subsequently, the reaction chamber was heated to 1100° C., and the methane gas flow rate of 20 sccm and the ammonia gas gas flow rate of 10 sccm were introduced to react, and the gas flow time was maintained for 60 minutes;

[0048] (4) After the reaction is completed, stop feeding methane and ammonia, and stop heating the iron foil, stop feeding hydrogen after cooling to room temperature, and prepare doped graphene on the surface of the iron foil.

[0049] figure 2 For the SEM picture of the nitrogen-doped graphene prepared in embodiment 1, from figure 2 It can be clearly see...

Embodiment 2

[0052] A preparation method of doped graphene, comprising the following steps:

[0053] (1) Ultrasonic cleaning of cobalt foil with deionized water, ethanol and acetone followed by drying;

[0054] (2) The dried cobalt foil is arranged in the reaction chamber, and the argon gas with a gas flow rate of 1000 sccm is introduced into the reaction chamber and kept for 1 minute;

[0055](3) Subsequently, the reaction chamber is heated to 900° C., and the acetylene with an air flow rate of 200 sccm and the methylamine with an air flow rate of 40 sccm are introduced to react, and the aeration time is kept for 30 minutes;

[0056] (4) After the reaction is completed, stop feeding acetylene and methylamine, and stop heating the cobalt foil, stop feeding argon after cooling to room temperature, and prepare doped graphene on the surface of the cobalt foil.

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Abstract

The invention provides a preparation method of doped graphene. The method comprises the steps of: cleaning a metal substrate and drying it; disposing the dried substrate in a reaction chamber, introducing a protective gas into the reaction chamber, and keeping the gas for 1-60min; then heating the reaction chamber to 750-1100DEG C, introducing a gaseous carbonaceous matter at a gas flow rate of 20-1000sccm and a gaseous nitrogenous matter at a gas flow rate of 10-200sccm to undergo a reaction, with C and N being in an atomic ratio of 2-20:1, and maintaining the reaction for 1-300mins, thus obtaining the doped graphene on the substrate surface. With no need for additional preparation of a catalyst, the method provided in the invention has the characteristics of simple process and equipment, and easy and feasible operation. Compared with other nitrogen doped methods, the product prepared by the method has the advantages of low oxygen content, easily controllable nitrogen content and uniform doping, etc.

Description

technical field [0001] The invention relates to a method for preparing graphene by chemical vapor deposition, in particular to a method for preparing doped graphene. Background technique [0002] Graphene is a two-dimensional carbon atom crystal discovered by Andre K. Geim of the University of Manchester in 2004. It is a single-layer or multi-layer extremely thin carbon material. Single-layer graphene has excellent electrical and thermal conductivity and low thermal expansion coefficient, and its theoretical specific surface area is as high as 2630m 2 / g (A Peigney, Ch Laurent, et al. Carbon, 2001, 39, 507), can be used in effect transistors, electrode materials, composite materials, liquid crystal display materials, sensors, etc. Graphene's unique structure and photoelectric properties make it a research hotspot in the fields of carbon materials, nanotechnology, condensed matter physics and functional materials. [0003] The research and application of graphene put forwar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C01B31/02C01B32/184
Inventor 周明杰袁新生王要兵
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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