High-sensitivity solid-state color image sensor

Abstract

The invention discloses a high-sensitivity solid-state color image sensor. Particularly, a large-area MOS (Metal Oxide Semiconductor) capacitor is used as a photoelectric conversion region, the generated and collected photoelectrons are transferred to a channel region arranged below the grid electrode of an adjacent small-sized MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) storage, furthermore, the transferred photoelectrons are injected into a storage layer of the storage to enable the threshold voltage of the storage to change, and finally, the intensity of the detected light is determined through reading the drain current of the storage. Pixel units of the color image sensor are as follows: each pixel unit of the color image sensor is composed of three pixel subunits which have the same structures and are respectively red, green and blue, and each of the red, green and blue pixel units is respectively composed of one MOS capacitor and one MOSFET structural storage tube. A manufacturing process of the color image sensor is completely compatible with a CMOS (Complementary Metal-Oxide-Semiconductor) process; and the color image sensor is matured in process, low in cost and easy to achieve.

Description

technical field [0001] The invention relates to a solid-state image sensing device, especially a high-sensitivity, low-cost color solid-state image sensing device based on CMOS technology, which can be used as an imaging device in products such as video cameras, digital cameras, palmtop computers, mobile phones, and PDAs. [0002] Background technique [0003] There are two main types of solid-state image sensing devices widely used now: charge-coupled device (CCD) and CMOS active pixel sensor APS. Although CCD sensors are superior to CMOS sensors in terms of sensitivity, resolution, and noise control, they have the disadvantages of complex process, high cost, large device size, small integration, slow imaging speed, high power consumption, and need for multiple power sources; and CMOS sensors have the advantages of low cost, low power consumption, and high integration, but they also have problems such as low sensitivity, high noise, and small dynamic range. It can be seen...

AI Technical Summary

Problems solved by technology

As the size of the device decreases, the area of ​​the conversion region decreases, so that the photoelectrons generated and collected also decrease, which affects the sensitivity and dynamic range of detection.

In addition, the channel region of the device is used as a photoelectron generation and collection region. When the energy of the incident photons is very large, such as in the ultraviolet light band, the charge on the device storage layer will gain enough energy to escape from the memory, or the device substrate or gate The electrons will directly enter the storage layer, changing the charge amount and charge distribution in the storage layer, thereby reducing the detection accuracy

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