Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ultrasonic-assisted grapheme photoresist removing method

An ultrasonic and graphene technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of graphene damage, incomplete deglue, and long time consumption

Active Publication Date: 2013-04-24
XIDIAN UNIV
View PDF2 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention provides a method for ultrasonically assisted graphene degumming, aiming at solving the problem of the graphene degumming method provided by the prior art, which is not thorough in degumming, easily causes graphene damage, and is difficult to ensure the cleanliness of graphene. The quality of graphene material is low, which is easy to cause the degradation of device performance. At the same time, the graphene deglue process takes a long time and the efficiency is very low.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultrasonic-assisted grapheme photoresist removing method
  • Ultrasonic-assisted grapheme photoresist removing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] (1) The graphene grown on the copper foil by the chemical vapor deposition method is glued and dried with PMMA;

[0051] (2) with FeCl 3 The solution corrodes the lower copper foil;

[0052] (3) Transfer of PMMA-shaped graphene to Si-SiO 2 on the substrate;

[0053] (4) Put the graphene sample into the ultrasonic generator, adjust the power to 10W, and the time is 2min;

[0054] (5) Inject analytically pure acetone and start the ultrasonic generator for cleaning;

[0055] (6) After cleaning, take out the sample, rinse it in absolute ethanol for 2 minutes, and then rinse it with deionized water for 2 minutes;

[0056] (7) Blow dry the samples with nitrogen for storage.

Embodiment 2

[0058] (1) The graphene grown on the copper foil by the chemical vapor deposition method is glued and dried with PMMA;

[0059] (2) with FeCl 3 The solution corrodes the lower copper foil;

[0060] (3) Transfer of PMMA-shaped graphene to Si-SiO 2 on the substrate;

[0061] (4) Put the graphene sample into the ultrasonic generator, adjust the power to 300W, and the time is 10min;

[0062] (5) Inject analytically pure acetone and start the ultrasonic generator for cleaning;

[0063] (6) After cleaning, take out the sample, rinse it in absolute ethanol for 20 minutes, and then rinse it with deionized water for 20 minutes;

[0064] (7) Blow dry the samples with nitrogen for storage.

Embodiment 3

[0066] (1) The graphene grown on the copper foil by the chemical vapor deposition method is glued and dried with PMMA;

[0067] (2) with FeCl 3 The solution corrodes the lower copper foil;

[0068] (3) Transfer of PMMA-shaped graphene to Si-SiO 2 on the substrate;

[0069] (4) Put the graphene sample into the ultrasonic generator, adjust the power to 60W, and the time is 6min;

[0070] (5) Inject analytically pure acetone and start the ultrasonic generator for cleaning;

[0071] (6) After cleaning, take out the sample, rinse it in absolute ethanol for 10 minutes, and then rinse it with deionized water for 10 minutes;

[0072] (7) Blow dry the samples with nitrogen for storage.

[0073] The invention discloses an ultrasonic-assisted degumming method for cleaning graphene, which mainly solves the problems of incomplete degumming, easy damage to graphene and low efficiency in the prior art. It includes the following steps: (1) use PMMA to spray and dry the graphene grown on...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an ultrasonic-assisted grapheme photoresist removing method. The ultrasonic-assisted grapheme photoresist removing method comprises the following steps: whirl coating and drying are carried out on grapheme growing on copper foil in a chemical vapor deposition method through polymethyl methacrylate (PMMA); FeCl3 solution is used for corroding the cooper foil below; the grapheme which is case-hardened through the PMMA is transferred to a Si-SiO2 substrate; a grapheme sample is placed into an ultrasonic generator for ultrasonic treatment; pure acetone is injected and analyzed, and the ultrasonic generator is started for cleaning; the sample is taken out after cleaning is finished, rinsed in absolute ethyl alcohol for 2-20 minutes, and then washed by deionized water for 2-20 minutes; and the sample in dried by nitrogen and stored. According to the ultrasonic-assisted grapheme photoresist removing method, dissolving of PMMA adhesive residue is accelerated effectively, cleanliness of the grapheme surface is improved, mixing of the grapheme by the substrate because of high temperature annealing is avoided, appropriate ultrasonic power and treatment time prevent damage on the grapheme, time is saved, preparation efficiency of the grapheme is improved, and the ultrasonic-assisted grapheme photoresist removing method has strong popularization and application value.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material preparation, and in particular relates to an ultrasonic-assisted graphene deglue method. Background technique [0002] With the development of integrated circuits, the critical dimensions of silicon (Si)-based devices have reached the theoretical and technical limits, and quantum effects have become the main mechanism. Traditional Si-based devices based on the diffusion-drift theory are limited by both physics and technology. Continue to undertake the important task of continuing Moore's Law. Therefore, it is necessary to find a new generation of basic semiconductor materials and develop new theories and device models to meet the needs of the continued development of integrated circuits. [0003] Graphene is a carbon-based two-dimensional crystal. It is the lightest and thinnest material known so far. Its thickness is only on the atomic scale and has extremely excellent physical and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/02
Inventor 韩砀王东宁静闫景东柴正张进成郝跃
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com