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Method for growing p-type transparent and conducting Ni1-xMgxO crystal film by doping Li

A transparent conductive, crystal technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problems that it is difficult to meet the requirements of optoelectronic device applications, there are few types of p-type TCO thin film materials, and poor photoelectric performance , to achieve the effect of excellent crystal quality, low resistivity and simple method

Inactive Publication Date: 2015-04-01
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the problems of existing p-type TCO thin film materials with few types and poor photoelectric properties so that it is difficult to meet the requirements of optoelectronic device applications, and to provide a Li-doped growth p-type transparent conductive Ni 1-x Mg x O crystal thin film method

Method used

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  • Method for growing p-type transparent and conducting Ni1-xMgxO crystal film by doping Li
  • Method for growing p-type transparent and conducting Ni1-xMgxO crystal film by doping Li
  • Method for growing p-type transparent and conducting Ni1-xMgxO crystal film by doping Li

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Experimental program
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Effect test

Embodiment 1

[0024] 1) Weigh NiO, MgO and Li with a purity of 99.99% 2 CO 3 Powder, wherein the molar percentage content x of MgO is 20%, the molar percentage content y of Li is 4%, NiO, MgO and Li 2 CO 3 The mixed powder and an appropriate amount of ethanol are poured into a ball mill jar equipped with agate balls successively, and placed on a ball mill for ball milling for 24 hours. There are two purposes of ball milling: on the one hand, it is to make NiO, MgO and Li 2 CO 3 The powder is mixed evenly to ensure the uniformity of the target material composition; on the other hand, it is to mix NiO, MgO and Li 2 CO 3 The powder is refined to facilitate the subsequent molding and sintering of the mixed powder.

[0025] After ball milling, the raw materials are separated and dried, and the resulting powder is ground and pressed into shape. Put the formed green body into a sintering furnace, pre-sinter at 800 °C for 1 hour, and then sinter at 1100–1200 °C for more than 4 hours to obtai...

Embodiment 2

[0029] 1) Weigh NiO, MgO and Li with a purity of 99.99% 2 CO 3 Powder, wherein the molar percentage content x of MgO is 30%, the molar percentage content y of Li is 8%, NiO, MgO and Li 2CO 3 The mixed powder and an appropriate amount of ethanol are poured into a ball mill jar equipped with agate balls successively, and placed on a ball mill for ball milling for 24 hours. There are two purposes of ball milling: on the one hand, it is to make NiO, MgO and Li 2 CO 3 The powder is mixed evenly to ensure the uniformity of the target material composition; on the other hand, it is to mix NiO, MgO and Li 2 CO 3 The powder is refined to facilitate the subsequent molding and sintering of the mixed powder.

[0030] After ball milling, the raw materials are separated and dried, and the resulting powder is ground and pressed into shape. Put the formed green body into a sintering furnace, pre-sinter at 800 °C for 1 hour, and then sinter at 1100–1200 °C for more than 4 hours to obtain...

Embodiment 3

[0034] 1) Weigh NiO, MgO and Li with a purity of 99.99% 2 CO 3 Powder, wherein the molar percentage content x of MgO is 10%, the molar percentage content y of Li is 4%, NiO, MgO and Li 2 CO 3 The mixed powder and an appropriate amount of ethanol are poured into a ball mill jar equipped with agate balls successively, and placed on a ball mill for ball milling for 24 hours. There are two purposes of ball milling: on the one hand, it is to make NiO, MgO and Li 2 CO 3 The powder is mixed evenly to ensure the uniformity of the target material composition; on the other hand, it is to mix NiO, MgO and Li 2 CO 3 The powder is refined to facilitate the subsequent molding and sintering of the mixed powder.

[0035] After ball milling, the raw materials are separated and dried, and the resulting powder is ground and pressed into shape. Put the shaped green body into a sintering furnace, pre-sinter at 800 °C for 1 hour, and then sinter at 1100-1200 °C for more than 4 hours to obtai...

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Abstract

The invention relates to a method for growing p-type transparent and conducting Ni1-xMgxO crystal film by doping Li, comprising the following steps: adopting pulse laser deposition method for compression and high-temperature sintering after ball milling and mixing NiO, MgO and Li2CO3 powders so as to manufacture Li-doped Ni1-xMgxO ceramic target; placing the ceramic target and a substrate in a pulse laser deposition device; adjusting the distance between the target and the substrate; growing at proper substrate temperature under proper oxygen pressure intensity and laser frequency; and then cooling till room temperature so as to obtain the Li-doped Ni1-xMgxO crystal film. The crystal film prepared by the method is p-type conducting, and has the excellent characteristics of being low in electrical resistivity, high in transmissivity, high in carrier mobility, continuously adjustable in band gap, and the like; and the method is simple, real-time doping is realized, the doping concentration is controlled by adjusting the growth temperature and the contents of Li and Mg in the target, and the obtained film has wide application prospect in the fields of transparent electronic devices, photoelectronic devices and the like.

Description

technical field [0001] The invention relates to a Li-doped growth p-type transparent conductive Ni 1-x Mg x The method for O crystal film belongs to the technical field of p-type transparent conductive film. Background technique [0002] Transparent conductive oxide (TCO) thin film is an important optoelectronic material, because of its unique combination of transparency and conductivity, it has broad application prospects in solar cells, flat-panel liquid crystal displays, light-emitting diodes and other fields. n-type TCO materials such as ITO (In 2 o 3 :Sn), FTO (SnO 2 :F) and AZO (ZnO:Al), its photoelectric performance has reached a good level, and has been widely used in commercial products. [0003] However, there are few types of corresponding p-type TCO materials, and their photoelectric properties are far from those of n-type TCOs, which limits their applications in transparent electronic and optoelectronic devices to a certain extent. Therefore, exploring and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/28C23C14/08C23C14/58
Inventor 曹铃李秀燕杨致
Owner TAIYUAN UNIV OF TECH
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