Concentric-ring sprayer structure for material vapor phase epitaxy

Abstract

The invention discloses a concentric-ring sprayer structure for material vapor phase epitaxy, which solves the problem that the large-area deposition region provides a uniform flow field of a precursor gas mixture in a large-substrate or multi-substrate crystal growth process. The sprayer structure comprises more than one independent air inlet pipeline, wherein each air inlet pipeline is provided with a controller for monitoring and regulating inlet gas flow speed and flow rate; the bottom of the sprayer is provided with an air outlet baffle; more than one concentric ring is arranged in the sprayer; independent cavities are formed among the concentric rings and are mutually separated; the top end of each concentric ring is connected with one independent air inlet pipeline; and the air outlet baffle at the bottom end of each concentric ring is provided with one or more air outlets. The air sources are mutually separated and independently controlled; and the multi-sprayer integrated use mode obviously improves the quality of the large-area deposited grown crystal, and greatly enhances the production efficiency.

Description

technical field [0001] The invention relates to a device for chemical vapor deposition (CVD) on a substrate, in particular to a nozzle design for large-area uniform deposition of hydride vapor phase epitaxy (HVPE). Background technique [0002] As the demand for LEDs, LDs, transistors, and integrated circuits increases, the efficiency of depositing high-quality III-nitride films takes on greater importance. Hydride vapor phase epitaxy (HVPE) technology has the characteristics of fast growth rate and low production cost, and is very suitable for the growth of group III-nitride semiconductor materials, such as the mass production of gallium nitride (GaN) wafers. To increase throughput and throughput, it is desirable to mix the precursors uniformly over larger substrates and / or multiple substrates, ie over larger area deposition areas. These factors are very important as it directly affects the cost of production and the competitiveness of the product in the market. [0003] ...

AI Technical Summary

Problems solved by technology

When the size of the substrate becomes larger or the number of substrates increases, that is, when the substrate is deposited in a large area, due to the structural limitation of the circular nozzle, the mixing of the precursors is not uniform enough, or the coverage area is too small, so it is not suitable for large-size substrates or multiple substrates. For the simultaneous growth of wafer substrates, the current nozzle structure on semiconductor growth equipment has serious limitations when used on large-scale / large-deposition areas. Poor uniformity and low production efficiency when depositing and growing crystals, so it is necessary to improve the nozzle structure for hydride vapor phase epitaxy (HVPE)

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