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Water-repellent protective film formation agent, chemical solution for forming water-repellent protective film, and wafer cleaning method using chemical solution

A chemical solution and protective film technology, applied in the direction of liquid cleaning methods, chemical instruments and methods, cleaning methods and utensils, etc., can solve problems such as inapplicability and inapplicability

Inactive Publication Date: 2013-03-13
CENT GLASS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this disclosed technique is a technique of modifying the resist itself for a resist pattern, and cannot be applied to this application.
In addition, since it can eventually be removed together with the resist, there is no need to consider the method of removing the treatment agent after drying, and it cannot be used for this purpose.

Method used

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  • Water-repellent protective film formation agent, chemical solution for forming water-repellent protective film, and wafer cleaning method using chemical solution
  • Water-repellent protective film formation agent, chemical solution for forming water-repellent protective film, and wafer cleaning method using chemical solution
  • Water-repellent protective film formation agent, chemical solution for forming water-repellent protective film, and wafer cleaning method using chemical solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0157] In Example 1, a study was conducted on the treatment of silicon oxide and silicon nitride. As smooth-surfaced wafers of silicon oxide and silicon nitride, "SiO with SiO" having a silicon oxide layer on a smooth-surfaced silicon wafer were used, respectively. 2 films on silicon wafers” (expressed in Table 1 as SiO 2 ), and a "silicon wafer with SiN film" (expressed as SiN in Table 1) with a silicon nitride layer on a smooth silicon wafer.

[0158] The details are as follows. The evaluation method of the wafer supplied with the chemical solution for forming a protective film, the preparation of the chemical solution for forming a protective film, and the evaluation results after supplying the chemical solution for forming a protective film to the wafer are described below.

[0159] [Evaluation method of a wafer supplied with the chemical solution for forming a protective film of the present invention]

[0160] As an evaluation method of a wafer supplied with the chemic...

Embodiment 1-1

[0172] (1) Preparation of chemical solution for protective film formation

[0173] 1g nonafluorohexyl dimethyl chlorosilane [C 4 f 9 (CH 2 ) 2 (CH 3 ) 2 SiCl] as a protective film forming agent, 96 g of hydrofluoroether (HFE-7100 manufactured by 3M Company) as an organic solvent, and 3 g of propylene glycol monomethyl ether acetate (PGMEA) were mixed (the aforementioned organic solvent is expressed as HFE7100 / PGMEA in Table 1 ), and stirred for about 5 minutes to obtain a chemical solution for forming a protective film with a concentration of the protective film forming agent (hereinafter referred to as “protective film forming agent concentration”) of 1% by mass relative to the total amount of the chemical solution for forming a protective film.

[0174] (2) Wafer cleaning

[0175] Immerse a smooth silicon wafer with a silicon oxide film (a silicon wafer with a thermally oxidized film layer with a thickness of 1 μm on the surface) in 1 mass % hydrofluoric acid aqueous s...

Embodiment 1-2~1-3

[0184] The organic solvent used in Example 1-1 was changed, the surface treatment of the wafer was performed, and the evaluation of the wafer was further performed. The results are shown in Table 1. In addition, in Table 1, CTFP / PGMEA means that 1-chloro-3,3,3-trifluoropropene (CTFP) was used instead of the organic solvent of HFE-7100 in Example 1-1, and DCTFP / PGMEA means that the organic solvent used cis-1,2-dichloro-3,3,3-trifluoropropene (DCTFP) was used instead of the organic solvent of HFE-7100 in Example 1-1.

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PUM

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Abstract

[Problem] To provide a water-repellent protective film formation agent, a chemical solution that contains the agent and is used for forming a water-repellent protective film, and a cleaning method for wafers that uses the chemical solution, wherein it is possible in the manufacturing of semiconductor devices to efficiently clean wafers while preventing pattern collapse of: wafers (1) in which a substance containing silicon atoms is included on at least the surface of the recesses in an unevenly patterned (2) wafer surface; or wafers (1) in which at least one type of substance selected from a group consisting of titanium, titanium nitride, tungsten, aluminum, copper, tin, tantalum nitride, and ruthenium, is included on part of at least the surface of the recesses in an unevenly patterned (2) wafer surface. [Solution] A water-repellent protective film formation agent that is used in wafer cleaning for forming a water-repellent protective film on at least the surface of the recesses of wafers, the agent being a silicon compound represented by the formula [1]. [1] R1aSiX4-a

Description

technical field [0001] The present invention relates to a technique for cleaning substrate wafers in semiconductor device manufacturing and the like. Background technique [0002] In the manufacture of semiconductor chips, fine uneven patterns are formed on the surface of silicon wafers through film formation, photolithography, etching, etc., and then water and organic solvents are used to clean the wafer surface. The miniaturization of components is progressing in order to increase the degree of integration, and the pitch of the concave-convex pattern is becoming smaller and smaller. Therefore, when cleaning with water, drying water from the wafer surface, or when the pattern passes through the air-liquid interface, problems such as collapse of the concave-convex pattern tend to occur due to capillary phenomenon. This problem becomes more noticeable when the pattern interval of concavo-convex is narrower. For example, in the case of a wafer with a pattern of line width / spa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304
CPCB08B3/04H01L21/67005C07F7/12C07F7/10C07F7/1804H01L21/02057
Inventor 斋藤真规斋尾崇荒田忍公文创一七井秀寿
Owner CENT GLASS CO LTD
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