Method for preparing beryllium-copper alloy sheet by adopting continuous magnetron sputtering physical-vapor deposition method
A physical vapor deposition, magnetron sputtering technology, applied in sputtering coating, metal material coating process, ion implantation coating and other directions, can solve the problem of low production efficiency, technical difficulty in rolling beryllium copper alloy, beryllium metal Environmental pollution and other problems, to achieve the effects of low manufacturing cost, flexible and controllable beryllium content, and high product yield
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0024] Embodiment 1: A method for preparing Cu-1~3wt.%Be alloy thin plate by continuous magnetron sputtering physical vapor deposition, the steps are:
[0025] Step 1. Select a pure copper strip with a thickness of 0.1-0.25mm as the substrate, and do the following pretreatment:
[0026] (1) Wash with sodium carbonate lye at a concentration of 3-5% and a temperature of 60-80°C for 3-5 minutes to remove oil stains;
[0027] (2) Wash with dilute sulfuric acid at a concentration of 3 to 5% for 3 to 5 minutes to remove scale;
[0028] (3) Rinse with clean water;
[0029] (4) Ultrasonic cleaning with anhydrous ethanol, drying for later use;
[0030] Step 2. Select pure Be target or high beryllium content beryllium copper (50 ~ 80wt.%Be) alloy target:
[0031] preparation Circular or 1000~1500mm×180~300mm×6~20mm square pure Be or high beryllium content beryllium copper 50~80wt.% Be alloy target is used as magnetron sputtering target, ready for use;
[0032] (3). Install the p...
Embodiment 2
[0046] Example 2 Magnetron sputtering vapor deposition single-sided Be infiltration
[0047] Step 1: Select pure copper substrate
[0048] Select a 200mm×200mm, 0.20mm thick pure copper strip as the substrate, first wash it with 5% sodium carbonate lye at a temperature of 60°C for 5 minutes to remove oil stains; then wash it with 4% dilute hydrochloric acid for 3 minutes to remove Oxidized skin; then rinse with clean water; then use absolute ethanol to ultrasonically clean, dry and set aside.
[0049] Step 2: Select pure Be target
[0050] preparation The circular pure Be target is used as the magnetron sputtering target, for use;
[0051] (3). Install the pure copper strip treated in step (1) on the substrate stage of the magnetron sputtering equipment as the anode; then put the pure Be target in step 2 into the magnetron sputtering target holder as the cathode;
[0052] Vacuum to 1.2×10 -3 After Pa, feed argon to stabilize the pressure in the magnetron sputtering coat...
Embodiment 3
[0059] Example 3 Magnetron sputtering vapor deposition single-sided Be infiltration
[0060] Step 1: Select pure copper substrate
[0061] Select a 1000mm×200mm, 0.15mm thick pure copper strip as the substrate, first wash it with a sodium carbonate solution with a concentration of 5% and a temperature of 60°C for 5 minutes to remove oil stains; then wash it with dilute hydrochloric acid with a concentration of 4% for 3 minutes to remove oxidation skin; then rinse with clean water; then ultrasonically clean with anhydrous ethanol, and dry for later use.
[0062] Step 2: Select a beryllium copper alloy target with high Be content
[0063] Melting and casting 1200mm×200mm×15mm high Be content beryllium copper (Cu-80wt.%Be) alloy target, ready for use;
[0064] Step 3: Install the pure copper strip processed in step 1 on the substrate of the magnetron sputtering film machine as an anode; then put the beryllium copper alloy target processed in step 2 into the magnetron sputtering...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
microhardness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com