Separate gate type flash memory of embedded logic circuit and fabricating method thereof

Abstract

The invention provides a fabricating method of a separate gate type flash memory of an embedded logic circuit. Compared with a forming method of a single separate gate type flash memory, the separate gate type flash memory, a high voltage transistor and a logic transistor can be simultaneously fabricated on one integrated circuit by five techniques of primary silicon oxide deposition, primary polycrystalline silicon deposition, secondary etching and primary silicon oxide layer removal, therefore, the densities of the three elements are increased, the integration degree is high, the operation speed is faster, and the integrated chip is smaller, so that the cost of each integrated chip is reduced, and the application is more extensive. Furthermore, in the forming process of the separate gate type flash memory of embedded logic circuit, the grids of the high voltage transistor and the logic transistor have few defects to meet the quality demands of the grids. Correspondingly, the invention further provides a separate gate type flash memory of the embedded logic circuit.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a split-gate flash memory embedded in a logic circuit and a manufacturing method thereof. Background technique [0002] Random access memory, such as DRAM and SRAM, has the problem of data loss after power failure during use. To overcome this problem, various nonvolatile memories have been designed and developed. Recently, flash memory based on the floating gate concept has become the most versatile non-volatile memory due to its small cell size and good performance. The non-volatile memory mainly includes two basic structures: a stack gate structure and a split gate structure. The stacked gate memory includes a tunnel oxide layer, a floating gate polysilicon layer for storing electrons, an oxide / nitride / oxide (oxide-nitride-oxide, ONO) stack layer and The control gate polysilicon layer that controls the storage and release of electrons. Split gate memory also includes...

AI Technical Summary

Problems solved by technology

[0005] If the split-gate flash memory, high-voltage transistors, and logic transistors are all built on a separate integrated chip, the operating speed of the entire memory will be limited by the signal transmission bandwidth between the flash memory and peripheral circuits

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