Isolation filling manufacture method in GaN-based high voltage light-emitting diode (LED) manufacture process

Abstract

The invention discloses an isolation filling manufacture method in gallium nitride (GaN)-based high voltage light-emitting diode (LED) manufacture process. The method includes conducting first N type gallium nitride layer etching to form a groove structure and form a first isolation insulation layer in the groove structure after forming the N type gallium nitride layer on a lining, forming a P type gallium nitride layer in the manufacture process of a light-emitting diode tube, conducting second groove etching to form a structure reaching a first isolation insulation layer and forming a second isolation insulation layer above the first isolation insulation layer. The method greatly reduces difficulty of forming an isolation filling structure, provides a smooth climbing structure for metallization interconnection of a follow-up chip electrode, simultaneously improves covering quality of the isolation insulation layer on the lateral face of the groove, and improves reliability and yield of a GaN-based high voltage LED.

Description

technical field [0001] The invention relates to a light-emitting diode (LED) device manufacturing technology, in particular to an isolation filling manufacturing method in a gallium nitride (GaN)-based high-voltage light-emitting diode (LED) manufacturing process. Background technique [0002] Gallium nitride (GaN)-based high-voltage light-emitting diodes (LEDs) are semiconductor devices that use gallium nitride semiconductor materials to form a PN junction to emit light. Because of its advantages of high efficiency, long service life, and low energy consumption, GaN-based high-voltage light-emitting diodes have good industrial application prospects. [0003] In the manufacturing process of gallium nitride-based high-voltage light-emitting diodes, it is necessary to use a trench structure filled with an isolation insulating layer to isolate adjacent chips. figure 1 It is a flow chart of the isolation and filling manufacturing method in the existing gallium nitride-based hig...

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Problems solved by technology

[0008] The existing isolation and filling method is to perform trench etching and isolation insulating layer filling after the epitaxial structure is completely formed. The trench etching reaches more than 5 microns, and the thickness of the isolation insulating layer is greater than 4 microns. The selective ratio of etching to mask is high, and the low selective ratio will cause damage to the etched epitaxial layer, and the etching depth is not enough

Moreover, due to the deep etching depth, there will be a problem of poor coverage of the protection of the side of the trench when filling with an isolation insulating layer.

Due to the above reasons, existing methods will affect the yield and reliability of LED chips

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