III-series nitride semiconductor device and manufacturing method thereof

Abstract

The invention discloses an III-series nitride semiconductor device and a manufacturing method thereof. The III-series nitride semiconductor device comprises a substrate, a nitride nucleating layer located on the substrate, a nitride buffering layer located on the nitride nucleating layer, a wide band gap deep-energy-grade modulating layer located on the nitride buffering layer, a nitride channel layer located on the wide band gap deep-energy-grade modulating layer, and an electrode formed on the nitride channel layer, wherein the wide band gap deep-energy-grade modulating layer is formed by an III-series nitride semiconductor layer containing a deep-energy-grade defect; the concentration of the deep-energy-grade defect is a constant or is gradually reduced from the nitride buffering layer to the nitride channel layer; and the wide band gap width of the wide band gap deep-energy-grade modulating layer is greater than the wide band gap width of the nitride channel layer. According to the III-series nitride semiconductor device and the manufacturing method thereof, the wide band gap deep-energy-grade modulating layer is inserted between the nitride channel layer and the nitride buffering layer, so as to play the roles of controlling leaked current and reducing a current collapsing effect.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a Group III nitride semiconductor device and a manufacturing method thereof. Background technique [0002] Group III nitride semiconductors have the characteristics of large band gap, high dielectric breakdown electric field and high electron saturation drift rate, and are suitable for making high-frequency, high-temperature, high-speed switching and high-power electronic devices. On the one hand, due to the extremely high mobility and saturation rate of GaN, GaN electronic devices have good application prospects in high-frequency power amplifiers. From the 1990s to the present, the development of GaN-based radio frequency devices has been one of the hot spots in the research of GaN electronic devices. On the other hand, GaN-based power switching devices have received more and more attention in recent years. This is because gallium nitride is a wide bandgap semiconduct...

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Problems solved by technology

These defects and impurities will greatly reduce the performance of the device, because dislocations and carbon impurities can introduce deep energy levels in the forbidden band, form trap centers or charge trapping centers, and trap charges in the nitride channel layer, lead to severe current collapse effect

On the other hand, oxygen and carbon introduced by unintentional doping and intrinsic defects including nitrogen defects will increase the leakage of gallium nitride devices during operation

In order to reduce leakage, in the actual growth process of the nitride buffer layer, impurities such as iron, carbon, and magnesium can be added to compensate for unintentional doping. However, impurities such as iron, carbon, and magnesium will be reintroduced into deep energy levels. The charge is trapped in the channel, which causes a more serious current collapse effect

Therefore, it is very difficult for people to find a compromise to strike a balance between reducing the current collapse effect and reducing leakage

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