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Substrate structure and semiconductor device

A substrate structure and semiconductor technology, applied in the direction of semiconductor devices, transistors, electrical components, etc., can solve the problems of SiC substrate insulation decline, device leakage increase, reliability risk, etc., to reduce the current collapse effect, high insulation , Solve the effect of low current collapse effect

Active Publication Date: 2021-10-29
深圳市时代速信科技有限公司
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Problems solved by technology

However, while doping the substrate to make the device have a smaller △Ec, on the other hand, it will lead to a decrease in the insulation of the SiC substrate, which will increase the leakage of the device and bring reliability risks, and the SiC The insulation of the substrate is reduced, which will also lead to an increase in the RF power loss of the device

Method used

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  • Substrate structure and semiconductor device
  • Substrate structure and semiconductor device
  • Substrate structure and semiconductor device

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Embodiment Construction

[0024] The embodiments described below represent the information necessary to practice the embodiments in the art, and the best mode of the embodiment is shown. After reading the following description with reference to the drawings, those skilled in the art will appreciate the concepts of the present invention, and will recognize the application of these concepts not specifically proposed herein. It should be understood that these concepts and applications are within the scope of the invention and the appended claims.

[0025] It should be understood that although the terms first, second, the second, etc. can be used herein, but these components should not be limited by these terms. These terms are only used in the area to divide one component and another element. For example, the first element can be referred to as a second element without departing from the scope of the invention, and similarly, the second element can be referred to as a first component. As used herein, the term...

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Abstract

The invention discloses a substrate structure and a semiconductor device, and relates to the technical field of semiconductors. The substrate structure is applied to the semiconductor device and comprises a substrate, a first injection doping region is formed on the upper surface of the substrate, the injection depth of the first injection doping region is smaller than the thickness of the substrate, the orthographic projection area of the first injection doping region on the substrate is smaller than the area of the substrate, and the first injection doping region is located in an active region of the semiconductor device. According to the substrate structure, the current collapse effect can be reduced, and the high insulativity of the substrate can be ensured.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, and in particular, a substrate structure and a semiconductor device. Background technique [0002] GaN as a third-generation wide-band semiconductor material, due to its large banner width, high electron saturation rate, high-tech electric field, higher thermal conductivity, corrosion resistance, and anti-radiation performance, high pressure, high frequency, high temperature, large Strong advantages under power and anti-radiation environment conditions are considered to be the best material for studying short-wave light electronic devices and high-voltage high frequency high power devices. Among them, for GaN devices, the current collapse effect after stress will directly affect the application of the device in the field of communication, so it is particularly important to reduce the current collapse effect to improve the efficiency and linearity of the device. [0003] Since the doping...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/10H01L29/778
CPCH01L29/1075H01L29/7786
Inventor 杨天应
Owner 深圳市时代速信科技有限公司
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