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IGBT (Insulated Gate Bipolar Translator) module radiating structure

A technology of heat dissipation structure and heat sink, applied in cooling/ventilation/heating transformation, electrical components, electrical solid devices, etc. Affect the heat dissipation effect of IGBT products and other issues, to achieve the effect of reducing material cost, improving heat dissipation effect, and reducing thickness

Inactive Publication Date: 2013-01-16
XIAN YONGDIAN ELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are more media (ie solder and AlSiC base plate) in the heat conduction process, which is not conducive to the direct dissipation of heat, which greatly affects the heat dissipation effect of IGBT products, thereby reducing the reliability, stability and safety of products;
[0006] 2. The AlSiC base plate and heat sink of the IGBT module are likely to have flatness problems such as scratches and wounds during the production process, which makes it very likely that there is no close contact between the AlSiC base plate and the heat sink, thus affecting the IGBT The heat dissipation effect of the product;

Method used

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  • IGBT (Insulated Gate Bipolar Translator) module radiating structure
  • IGBT (Insulated Gate Bipolar Translator) module radiating structure

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Embodiment Construction

[0016] The technical solutions in the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0017] Such as figure 2 As shown, the present invention discloses a heat dissipation structure of an IGBT module, including a housing (not shown), a DBC board 102 and a radiator 103, and the housing exerts longitudinal pressure on the DBC board 102, thereby pressing the DBC board 102 tightly against the heat dissipation device 103.

[0018] In the DBC board in the prior art, solder is firstly placed on the AlSiC base plate, then the DBC board is welded on the AlSiC base plate, and then the AlSiC base plate is fixed on the radiator by screws. In this existing IGBT module, the following problems generally exist when the heat generated by the chip is conducted to the heat sink:

[0019] 1. The heat generated by the chip is first conducted to the AlSiC base plate through the solder between the DBC board and the AlSiC base ...

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Abstract

The invention discloses an IGBT (Insulated Gate Bipolar Translator) module radiating structure. The structure comprises a shell, a DBC plate and a radiator, wherein the DBC plate is tightly stuck to the radiator through the longitudinal pressure applied by the shell; and a heat-conducting silicon grease layer is arranged between the DBC plate and the radiator. By the heat-conducting silicon grease layer arranged between the DBC plate and the radiator, the heat generated in an application process of an IGBT module can be more quickly and directly transferred, the medium required in a heat transferring process is reduced, the radiation effect of an IGBT product is greatly improved, and the reliability, the stability and the safety of a product are further ensured. Meanwhile, an AlSiC bottom plate which is widely adopted in the current IGBT module and a welding material of the AlSiC bottom plate are omitted, the cost of the materials as well as the thickness of the IGBT product are reduced, and the space occupied by the product is reduced.

Description

technical field [0001] The invention relates to the field of IGBT modules, in particular to a heat dissipation structure of the IGBT module with good heat dissipation effect. Background technique [0002] The radiator of the IGBT module plays a very important role in the stable operation of the whole module. However, in the prior art, since the space in the chassis of the IGBT module is certain, the limited space in the chassis limits the size of the radiator to a large extent. The heat dissipation effect of the radiator becomes very difficult. [0003] Such as figure 1 As shown, the current IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) module, the widely used structure is to weld the DBC board 001 (ceramic copper clad laminate) to the AlSiC base board 002, that is, the DBC board 001 is passed through The solder tabs are soldered on the AlSiC base plate 002 in a high temperature environment. The outer shell of the DBC board 001 is used to pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/373H05K7/20
Inventor 吴磊
Owner XIAN YONGDIAN ELECTRIC
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