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High-specific-surface-area mesoporous graphite-phase carbon nitride material and preparation method thereof

A graphite phase carbon nitride, high specific surface technology, applied in the direction of nitrogen and non-metallic compounds, can solve the problems of small size, difficult to control surface area and pore volume, and highly toxic raw materials

Inactive Publication Date: 2013-01-16
PETROCHINA CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved in the present invention is aimed at the disadvantages of highly toxic raw materials, inflammable and explosive products, small specific surface area of ​​the product, and difficult control of surface area and pore volume when preparing mesoporous graphite phase carbon nitride materials. In order to solve the above problems , the present invention provides a kind of mesoporous g-C with large specific surface area and controllable specific surface and pore volume by using cheap and safe chemical reagents as raw materials. 3 N 4 Materials and their preparation methods

Method used

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  • High-specific-surface-area mesoporous graphite-phase carbon nitride material and preparation method thereof
  • High-specific-surface-area mesoporous graphite-phase carbon nitride material and preparation method thereof
  • High-specific-surface-area mesoporous graphite-phase carbon nitride material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0028] (1) Dissolve 4 g of guanidine hydrochloride in 6.4 g of water to obtain an aqueous solution of guanidine hydrochloride;

[0029] (2) Drop the guanidine hydrochloride aqueous solution obtained in step (1) into 3.2 g of SiO 2 nanosphere (15nm) powder, and stirred for 3h, forming a white paste solid;

[0030] (3) Dry the white paste solid obtained in step (2) in an oven at 80°C for 8 hours to obtain a white powder;

[0031] (4) Put the above-mentioned white powder obtained in step (3) into a tube furnace with a nitrogen atmosphere and roast it. The temperature programming condition is: from room temperature to 550°C at a rate of 3°C / min, and then keep at this temperature for 2h , yellow powder was obtained after cooling down;

[0032] (5) Disperse the yellow powder obtained in step (4) in 100g NH 4 HF 2 in aqueous solution (solute 24g), stirred for 2 days to remove SiO in the yellow powder 2 ;

[0033] (6) Filtrating or centrifuging the mixture obtained in step (5) t...

Embodiment 2

[0037] (1) Dissolve 4 g of guanidine hydrochloride in 9.6 g of water to obtain an aqueous solution of guanidine hydrochloride;

[0038] (2) Add the guanidine hydrochloride solution obtained in step (1) to 4.8 g of SiO2 at a rate of 2 s per drop. 2 nanosphere (15nm) powder, and stirred for 3h, forming a white paste solid;

[0039] (3) Dry the white paste solid obtained in step (2) in an oven at 100°C for 4 hours to obtain a white powder;

[0040] (4) The white powder obtained in step (3) was roasted in a tube furnace with a nitrogen atmosphere. The temperature programming conditions were as follows: from room temperature to 450 °C at a rate of 3 °C / min, and then kept at this temperature for 4 hours. After cooling down, a yellow powder is obtained;

[0041] (5) Disperse the yellow powder obtained in step (4) in 200g HF aqueous solution (solute 20g), stir for 1 day to remove SiO in the yellow powder 2 ;

[0042] (6) Filtrating or centrifuging the mixture obtained in step (5) ...

Embodiment 3

[0046] (1) Dissolve 4 g of guanidine hydrochloride in 12 g of water to obtain an aqueous solution of guanidine hydrochloride;

[0047] (2) Add the guanidine hydrochloride solution obtained in step (1) dropwise to 10 g of SiO at a rate of 2 s per drop 2 nanosphere (30nm) powder, and stirred for 3h, forming a white paste solid;

[0048] (3) Dry the white paste solid obtained in step (2) in an oven at 100°C for 4 hours to obtain a white powder;

[0049] (4) The white powder obtained in step (3) was roasted in a tube furnace with a nitrogen atmosphere. The temperature programming conditions were as follows: from room temperature to 500 °C at a rate of 3 °C / min, and then kept at this temperature for 3 hours. After cooling down, a yellow powder is obtained;

[0050] (5) Disperse the yellow powder obtained in step (4) in an aqueous solution of 120g HF (solute 12g), and stir for 2 days to remove SiO in the yellow powder 2 ;

[0051] (6) Filtrating or centrifuging the mixture obtai...

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Abstract

The invention relates to the field of inorganic materials, in particular to a high-specific-surface-area mesoporous graphite-phase carbon nitride material and a preparation method thereof. The graphite-phase carbon nitride material which is yellow powder is 5-28nm in pore diameter, 120-220m<2> / g in specific surface area and 0.4-0.7cm<3> / g in pore volume. The preparation method includes: dispersing guanidine hydrochloride solution on nano SiO2 microspheres or mesoporous silicon oxide materials, stirring, drying, calcining in an inert atmosphere, and removing a mould plate to obtain the mesoporous graphite-phase carbon nitride material. The raw material guanidine hydrochloride is low in cost and safe, the preparation method is simple, and the product is high in specific surface area. Further, adjustment of pore volume and specific surface area of the mesoporous graphite-phase carbon nitride material can be realized by adjusting usage of template agent.

Description

technical field [0001] The invention relates to the field of inorganic materials, in particular to a high specific surface mesoporous graphite phase carbon nitride material and a preparation method thereof. Background technique [0002] Graphite carbon nitride (g-C 3 N 4 ) is a carbon-containing covalent compound composed of three-s-triazine or triazine as the parent structure, bridged by N atoms, and finally stacked in graphite-like form. g-C 3 N 4 The band gap is only 2.7eV, which is a semiconductor material with better performance; on the other hand, g-C 3 N 4 The highly conjugated N lone pair electrons in the parent structure can activate aromatic hydrocarbon molecules such as benzene, and the abundant amine groups on the edge of the graphitic layer make it have good basic properties. Therefore, g-C 3 N 4 In photocatalysis, heterogeneous catalysis, fuel cells, CO 2 Adsorption and other fields highlight potential application prospects, and are regarded by scienti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/082
Inventor 李永昕王翔许杰薛冰
Owner PETROCHINA CO LTD
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