Method for manufacturing shallow trench isolation

Abstract

The invention provides a method for manufacturing shallow trench isolation. After being etched to form a shallow trench, a substrate is subject to an annealing process under a certain condition of hydrogen atmosphere, so that element atoms of the substrate are promoted to make thermal motion migration under a high temperature, side walls of the rough shallow trench and square corners of the shallow trench become smooth, the leakage current of a semiconductor device employing the shallow trench isolation is reduced, and the performances of the semiconductor device and an integrated circuit are improved.

Description

technical field [0001] The invention relates to the manufacturing technology of semiconductor devices, in particular to a manufacturing method of shallow trench isolation. Background technique [0002] As the microelectronics process enters the deep submicron stage, in order to realize high-density, high-performance large-scale integrated circuits, the isolation process between semiconductor devices becomes more and more important. The prior art generally uses Shallow Trench Isolation (STI, Shallow Trench Isolation) to realize the isolation of active devices, such as in CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor) devices, NMOS (N-Mental-Oxide- The isolation layer between the Semiconductor (N-type metal oxide semiconductor) transistor and the PMOS (P-Mental-Oxide-Semiconductor, P-type metal oxide semiconductor) transistor is formed by the STI process. [0003] Such as Figure 1a As shown, the existing STI process flow is usually on...

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Problems solved by technology

[0006] The invention provides a method for manufacturing shallow trench isolation, which solves the problem of device performance degradation caused by rough side walls of existing STIs

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