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Detection method of selective doping region property

A technology of doped regions and detection methods, applied in the field of solar cells, can solve the problem of unusable selective emitters, and achieve the effect of high resolution

Active Publication Date: 2013-01-02
广东铨镁能源集团有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

None of these methods can be used for selective emitter

Method used

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  • Detection method of selective doping region property
  • Detection method of selective doping region property
  • Detection method of selective doping region property

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Example 1 Detects the characteristics of the selectively doped region made by gas diffusion + laser doping

[0027] (1) The first low-doped gas diffusion is completed on the silicon wafer, and then the surface dielectric film is plated, and then a certain pattern of metal paste is printed on the surface of the silicon wafer according to the test requirements, and the metal electrode is formed after sintering. figure 2 As shown, each crystalline silicon wafer sample 4 is provided with a plurality of independent test areas, wherein each test area is provided with collected electrodes 9 and electrodes 10 connected to external circuits;

[0028] (2) Using the beam-induced current method (laser wavelength 532nm, the spot diameter of the focused laser beam is about 30gm), the focused laser beam is used to scan the surface of the battery, and at the same time, the photocurrent generated by the corresponding scanning point is measured through the electrodes to form the photogene...

Embodiment 2

[0033] Example 2 Detects the characteristics of the selectively doped region made by two gas diffusions

[0034] (1) Since electrodes cannot be made between the two gas diffusions, two adjacent silicon wafers cut from the middle of the same ingot can be used. It can be considered that the performance and internal characteristics of the silicon wafers are basically the same. If the silicon wafers are placed in the same position adjacent to the middle of the diffusion furnace, it can be considered that the diffusion process is basically the same, so that the performance difference between the two silicon wafers after diffusion is very small;

[0035](2) After the two silicon wafers complete a gas diffusion, one of them is used as a reference wafer to complete the coating, printing and sintering electrodes, such as figure 2 shown;

[0036] (3) The other piece is used as a test piece, and a mask is made on the surface according to the selective emitter pattern, and then the secon...

Embodiment 3

[0039] Example 3 Detecting the characteristics of the selectively doped region made by gas diffusion + doping slurry

[0040] (1) The first low-doped gas diffusion is completed on the silicon wafer, and then the surface dielectric film is plated, and then a certain pattern of metal paste is printed on the surface of the silicon wafer according to the test requirements, and the metal electrode is formed after sintering, such as figure 2 shown;

[0041] (2) As shown in Figure 1, using the beam-induced current method (laser wavelength is 633nm, spot diameter 50μm), the focused laser beam is used to scan the surface of the battery, and at the same time, the photocurrent generated by the corresponding scanning point is measured through the electrodes to form the test area. Detailed data and images of photogenerated current;

[0042] (3) Print the doping paste on the surface of the silicon wafer according to the pattern of the selective emitter by screen printing or precision print...

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Abstract

The invention discloses a detection method of a selective doping region property. The method comprises the steps of scanning a selective doping region and a peripheral region thereof by utilizing a focusing laser beam; and meanwhile, measuring photoelectrical current generated by each point, and comparing and analyzing the change of the photoelectrical current before and after selective doping to characterize the uniformity and the resistance of the selective doping. Therefore, a process of preparing a selective emission electrode is guided to be improved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a method for detecting characteristics of selectively doped regions. Background technique [0002] At present, the production and application of solar cells is developing rapidly, among which crystalline silicon solar cells occupy the mainstream position. Ordinary crystalline silicon cells use "chemical cleaning texturing-high temperature gas diffusion to make pn junction-PECVD plating anti-reflection film-screen printing metal paste - High-temperature sintered metal electrodes" production process, the photoelectric conversion efficiency of the battery can reach 17%-18%. In order to further improve the efficiency of the battery, many new technologies have emerged, among which the selective emitter is currently considered to be a mainstream new technology for high-efficiency batteries in the future. [0003] The common technology of high temperature gas diffusion ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
Inventor 沈辉王学孟林杨欢
Owner 广东铨镁能源集团有限公司
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