Trench gate type insulated gate bipolar transistor and manufacturing method thereof

Abstract

The invention discloses a trench gate type insulating gate bipolar transistor and a manufacturing method of the trench gate type insulating gate bipolar transistor. The trench gate type insulating gate bipolar transistor comprises a drift region, a valid base region arranged inside the front side of the drift region and trench gates arranged inside the front side of the drift region and two sides of the base region, wherein the trench gates comprise valid trench gates adjacent to the valid base region and invalid trench gates far away from the valid base region. According to the trench gate type insulating gate bipolar transistor provided by the invention, by increasing the number of the trench gates inside the trench gate type insulating gate bipolar transistor, the total widths of the trench gates are increased, and the ratio of the width of the valid base region to the width of single cell is reduced, so that the cavity concentration of the drift region is increased, and the conductivity modulation effect is enhanced ultimately; therefore, the conductive resistance of a device is reduced; and furthermore, with the adoption of the trench gate type insulating gate bipolar transistor, the current density can be reduced, and a short circuit security working region of the device is improved.

Description

technical field [0001] The invention relates to the technical field of manufacturing technology of semiconductor devices, and more specifically relates to a trench gate type insulated gate bipolar transistor and a manufacturing method thereof. Background technique [0002] An insulated gate bipolar transistor (Insulate Gate Bipolar Transistor, IGBT) has many advantages of a power transistor (Giant Transistor, GTR) and a field effect transistor (MOSFET), and has good characteristics. As the main representative of new power semiconductor devices, it is widely used in the fields of industry, information, new energy, medicine, transportation, military and aviation. [0003] The initially developed IGBT has a planar gate structure, and later a trench gate structure formed by a dry etching process appeared. Compared with the planar gate structure, the trench gate structure can improve the conduction characteristics of the IGBT device and reduce the conduction resistance. refer t...

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Problems solved by technology

[0004] When the above-mentioned trench gate IGBT works at high temperature, on the one hand, the temperature rises, the carrier lifetime increases, and the transistor amplification factor becomes larger, resulting in a larger hole current flowing through the base region 2; on the other hand, the temperature The increase makes the mobility of holes greatly reduced, which in turn increases the resistance of the base region 2, and finally increases the on-resistance of the trench gate IGBT

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