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Preparation method of high-purity indium

A high-purity, metal indium technology, applied in the field of metallurgy, can solve the problems of producing toxic gas, failing to meet the use requirements, and the purity of high-purity indium is not high enough, so as to achieve the effect of simple operation and avoiding toxic gas

Active Publication Date: 2012-12-26
广西德邦科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the commonly used metal indium purification process is to electrolyze the raw material indium, and then obtain high-purity indium by smelting, but the purity of high-purity indium obtained by this method is not high enough to meet the use requirements, and the purification process is more complicated. Purification process may produce toxic gas

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The indium raw material is washed after acid leaching, and the measured and calculated main impurity contents are: copper 4μg / g, tin 7μg / g, arsenic 7μg / g, zinc 6μg / g, thallium 5.5μg / g, lead 7.6μg / g, Iron 7.2μg / g, cadmium 3μg / g, aluminum 2.7μg / g, after step (3), the content of cadmium is 0.4μg / g, the content of thallium is 1.2μg / g, the content of tin is 2.2μg / g, The aluminum content was 2.2 μg / g, and the zinc content was 4.6 μg / g. The above-mentioned indium raw material is electrolyzed once, the electrolyte solution contains indium 100g / L, sodium chloride 80 g / L, gelatin 0.5 g / L, thiourea 0.1 g / L, the cell voltage during electrolysis is 0.3V, the temperature is 20 ℃, The pH value is 2, the current density is 80A / ㎡; then carry out secondary electrolysis, the electrolyte contains 100g / L indium, 80 g / L sodium chloride, 0.5 g / L gelatin, and 0.1 g / L thiourea. The voltage is 0.3V, the temperature is 20°C, the pH value is 2, and the current density is 40A / ㎡; after analysis, th...

Embodiment 2

[0026] The indium raw material is washed after acid leaching, and the measured and calculated main impurity contents are: copper 8μg / g, tin 5μg / g, arsenic 5μg / g, zinc 4.5μg / g, thallium 6μg / g, lead 6.5μg / g, Iron 8.3μg / g, cadmium 3μg / g, aluminum 2.3μg / g, after step (3), the content of cadmium is 0.42μg / g, the content of thallium is 1.5μg / g, the content of tin is 1.5μg / g, The aluminum content was 4.3 μg / g, and the zinc content was 3.6 μg / g. The above-mentioned indium raw material is electrolyzed once, the electrolyte solution contains indium 100g / L, sodium chloride 100 g / L, gelatin 0.5 g / L, thiourea 0.1 g / L, the cell voltage during electrolysis is 0.3V, the temperature is 25°C, The pH value is 2.5, the current density is 100A / ㎡; then carry out secondary electrolysis, the electrolyte solution contains 100g / L indium, 100 g / L sodium chloride, 0.5 g / L gelatin, and 0.1 g / L thiourea. The voltage is 0.2V, the temperature is 25°C, the pH value is 2.5, and the current density is 50A / ㎡; a...

Embodiment 3

[0028]The indium raw material is cleaned after acid leaching, and the measured and calculated main impurity content is: copper 7μg / g, tin 5.5μg / g, arsenic 6μg / g, zinc 3.6μg / g, thallium 5.2μg / g, lead 6μg / g , iron 5.5 μg / g, cadmium 6.2 μg / g, aluminum 3.1 μg / g, after step (3), the content of cadmium is 0.9 μg / g, the content of thallium is 2 μg / g, and the content of tin is 1.2 μg / g , The content of aluminum is 2.1 μg / g, and the content of zinc is 2 μg / g. The above-mentioned indium raw material is electrolyzed once, the electrolyte solution contains indium 100g / L, sodium chloride 120 g / L, gelatin 0.5 g / L, thiourea 0.1 g / L, the cell voltage during electrolysis is 0.3V, the temperature is 25°C, The pH value is 2.5, the current density is 120A / ㎡; and then the secondary electrolysis is carried out. The electrolyte contains 100g / L indium, 120 g / L sodium chloride, 0.5 g / L gelatin, and 0.1 g / L thiourea. The voltage is 0.2V, the temperature is 25°C, the pH value is 2.5, and the current de...

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Abstract

The invention relates to a preparation method of high-purity indium. The preparation method comprises the following steps: an acid leaching step of leaching the material indium to dilute sulphuric acid, so as to remove oxide on the surface of the material indium; a measuring step of getting the material indium out of the dilute sulphuric acid, cleaning and drying the material indium, and measuring the impurities and content in the material indium by a photometer, wherein the impurities include copper, tin, arsenic, zinc, thallium, lead, iron, cadmium and aluminium; a smelting and impurity-removing step of smelting the impurity-removed material indium and removing the impurity of tin, thallium and cadmium. According to the preparation method of the high-purity indium, firstly, the impurities of tin, thallium and cadmium, which are difficult to electrolyze and of which chemical potentials close to that of indium, are smelted to reduce the content of the tin, the thallium and the cadmium; and then the content of copper, tin, arsenic, zinc, thallium, lead, iron, cadmium, aluminium and the like are further reduced by secondary electrolysation, so that the high-purity indium achieves the purity of more than 5N, thereby satisfying the usage requirements; and moreover, the preparation method is simple to operate, and is capable of preventing the poisonous gas from polluting the environment.

Description

technical field [0001] The invention relates to the field of metallurgy, in particular to a method for preparing high-purity indium. Background technique [0002] High-purity indium is widely used in semiconductor manufacturing and is used to prepare semiconductor compounds. When preparing indium-based semiconductor compounds, the purity of indium is highly required, and high-purity indium with a purity of more than 5N must be used. Because metal indium is extremely dispersed in the earth's crust, there is no independent industrial mineral, and most of them are derived from the recycling of zinc, tin, copper and other smelting industries. Indium prepared from these raw materials contains more copper, tin, arsenic, zinc, thallium, Impurities such as lead, iron, cadmium, aluminum, etc., and impurities have a great impact on the performance of indium, so indium must be purified. At present, the commonly used metal indium purification process is to electrolyze the raw material...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25C1/22
Inventor 梁义何焕全韩洪涛
Owner 广西德邦科技有限公司
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