Chemico-mechanical polishing solution for monox dielectric materials

Abstract

The invention relates to a chemico-mechanical polishing solution, in particular to the chemico-mechanical polishing solution for monox dielectric materials. The chemico-mechanical polishing solution can be effectively applied to the monox dielectric materials in a semiconductor. The chemico-mechanical polishing solution for the monox dielectric materials contains oxide polishing particles, salt components, a chelating agent, a pH conditioning agent and a water-based medium, wherein the chemico-mechanical polishing solution comprises the following components in percentage by weight: 0.2-50wt% of the oxide polishing particles, 0.1-5wt% of the salt components, 0.05-5wt% of the chelating agent and the balance of the pH conditioning agent and the water-based medium with total weight of the chemico-mechanical polishing solution serving as a standard, a general formula of the salt components is MXn, the M is a metallic element, the X is a halogen, and the n is equal to 1,2 or 3. The chemico-mechanical polishing solution greatly improves a removing rate of a silica film under appropriate pH conditions through unique combination of the salt components and the chelating agent.

Description

technical field [0001] The invention relates to a chemical mechanical polishing fluid, in particular to a chemical mechanical polishing fluid for silicon oxide dielectric materials, which can be effectively applied to silicon oxide dielectric materials in semiconductors. Background technique [0002] In order to meet the huge demand of the semiconductor market and respond to the increasingly higher performance requirements of consumers, the operating speed of semiconductor devices is getting faster and higher, and the storage capacity is getting higher and higher. The chip feature size and integration level have been along the lines of Intel Corporation The Moore's Law proposed by the founder G. Moore is developing rapidly. Driving the processing technology to move towards higher current density, higher clock frequency and more interconnection layers. Due to the reduction of device size and the reduction of focal depth of optical lithography equipment, the flatness of accep...

AI Technical Summary

Problems solved by technology

Because silicon oxide is hard, chemically inert (only reacts with HF and strong alkali), and mainly mechanically removed in polishing, semiconductor factories usually use 20wt% or higher concentration of silicon dioxide polishing fluid, 4-6psi The high polishing pressure to polish the silicon dioxide film, however, can only achieve a removal rate of about 100nm / min

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