Integrated manufacturing method for mems thin-film capacitive multi-parameter sensors

Abstract

The invention discloses an MEMS (Micro Electro Mechanical System) film capacitive type multi-parameter sensor structure and an integrated manufacturing method thereof. An MEMS carrying substrate is provided with MEMS film capacitive type pressure, temperature and humidity sensors which are arranged side by side. Electrodes, sacrificial layers, sensitive layers, sensitive films and protective layers of the three sensors adopt mutually matching structures and materials and therefore can be manufactured through an integrated surface micro-processing technology. The multi-parameter sensor structure and the integrated manufacturing method provided by the invention have the advantages of reducing volume of components, simplifying technical steps and being capable of decreasing cost of sensor products to a certain extent. In addition, the wholly capacitive structure adds application potential of the MEMS film capacitive type multi-parameter sensor structure in an inductive coupling based passive wireless sensing system.

Description

technical field [0001] The invention relates to a MEMS film capacitive multi-parameter sensor structure and an integrated manufacturing method thereof, belonging to the field of MEMS sensor manufacturing. Background technique [0002] With the development of Internet of Things technology, a large number of sensors are required to collect different types of data. Therefore, the production of MEMS sensors using batch micro-nano manufacturing technology plays an important role in improving the consistency of sensor performance and reducing the energy consumption of sensor systems and sensor costs. meaning. In particular, in production and life, on the one hand, people usually pay attention to multiple parameters in the measured environment at the same time (such as: pressure, temperature, humidity, chemical composition, etc.), therefore, it is necessary to use different sensors to collect sensitive parameters separately , in order to achieve process consistency, system miniatu...

AI Technical Summary

Problems solved by technology

In 2005, A. D. DeHennis and K. D. Wise of the University of Michigan integrated capacitive pressure, temperature and humidity sensors for a passive wireless sensor system, but the three sensors were manufactured separately, the process was cumbersome, and bulk silicon was used Processing technology, as well as the method of wafer bonding, the sensor products produced are relatively large; recently, in 2011, A. C. McNeil of Freescale Semiconductor Corporation and others successfully used capacitive pressure and temperature sensors manufactured by thin film technology. integration, but its sensor manufacturing is also more cumbersome

[0003] Analysis of the above research background shows that there are many reports on the manufacture of MEMS multi-parameter sensors, among which there are many full-capacitive structures for inductively coupled wireless passive sensor systems, but in general, the use of bulk silicon processing technology The manufactured products are large in size, and various sensors cannot be integrated, and the cumbersome manufacturing process also increases the cost of the final product to a certain extent

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