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Preparation method of silicon carbide cutting edge materials for photovoltaic industry

A silicon carbide and cutting edge technology, applied in the direction of silicon carbide, carbide, etc., can solve the problems of high energy consumption, low output rate and high roundness value of silicon carbide blade material, so as to improve the quality of slices, improve the cutting efficiency, The effect of increasing productivity

Inactive Publication Date: 2012-11-28
NORTHEASTERN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the silicon carbide cutting blades used in the photovoltaic industry are mainly divided into four varieties according to the different particle sizes: JIS1000, JIS1200, JIS1500 and JIS2000 (respectively, the Japanese particle size standards are 1000 mesh, 1200 mesh, 1500 mesh and 2000 mesh). It is equipped for different types of crystalline silicon cutting machines; the silicon carbide cutting blades used in the photovoltaic industry are mainly obtained by crushing and screening silicon carbide raw materials, the production process is single, and the main equipment for producing silicon carbide cutting blades It is one of Raymond mill, jet mill and ball mill; the silicon carbide cutting edge produced by Raymond mill has a high roundness value (around 0.9), which is not conducive to the cutting of crystalline silicon, and the output rate Low (about 52~53%); a roundness value of 1 indicates a circular shape, and a smaller roundness value indicates that the silicon carbide particles are more irregular and have sharp edges and corners, which is conducive to the cutting of crystalline silicon; silicon carbide produced by jet milling process The blade consumes a lot of energy and has a roundness value greater than 0.91, which is more suitable for refractory materials and ceramic materials; the roundness value of the silicon carbide cutting blade using the ball mill process is about 0.86, and the yield rate is about 50%.
It can be seen from the above that due to the use of a single Raymond mill process, jet mill process or ball mill process to produce silicon carbide cutting blades, the high roundness value is not conducive to the cutting of crystalline silicon and the low output rate leads to a lot of waste of silicon carbide The problem

Method used

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  • Preparation method of silicon carbide cutting edge materials for photovoltaic industry

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] 1. Break the silicon carbide raw material into pieces, the particle size of which is ≤5mm;

[0023] 2. Use Raymond Mill for primary crushing of the crushed materials. When the particle size of the crushed materials is 4.5~15 μm accounting for 28% of the total weight of the total crushed materials, the wind classifier is used for primary classification, and the separated particle size is > 15 μm The part with a particle size of 4.5-15 μm is regarded as a first-grade fine material, and the part with a particle size of less than 4.5 μm is removed;

[0024] 3. Use Raymond Mill as the primary raw material for secondary crushing. When the secondary raw material has a particle size of 4.5-15 μm accounting for 80% of the total weight of the secondary raw material, use a wind classifier for secondary crushing. Classification, the part with a particle size > 15 μm is regarded as the second-grade coarse material, the part with a particle size ≤ 15 μm is regarded as the second-grad...

Embodiment 2

[0029] 1. Break the silicon carbide raw material into pieces, the particle size of which is ≤5mm;

[0030] 2. Use a ball mill for primary crushing of the crushed material. When the particle size of the crushed material is 4.5~15μm accounting for 29% of the total weight of the total crushed material, the wind classifier is used for primary classification, and the separated particle size > 15μm As a grade 1 coarse material, the part with a particle size of 4.5~15 μm is regarded as a grade 1 fine material, and the part with a particle size of less than 4.5 μm is removed;

[0031] 3. Use the ball mill as the primary raw material to carry out secondary crushing. When the particle size of the secondary raw material is 4.5~15μm accounts for 81% of the total weight of the secondary raw material, use a hydraulic classifier for secondary classification. Parts with a particle size > 15 μm are classified as Class 2 coarse materials, and those with a particle size ≤ 15 µm are classified as...

Embodiment 3

[0036] 1. Break the silicon carbide raw material into pieces, the particle size of which is ≤5mm;

[0037] 2. Use Raymond mill to carry out primary crushing of the crushed materials. When the particle size of the crushed materials is 4.5~15μm accounting for 30% of the total weight of the total crushed materials, the wind classifier is used for primary classification, and the separated particle size is >15μm The part with a particle size of 4.5-15 μm is regarded as a first-grade fine material, and the part with a particle size of less than 4.5 μm is removed;

[0038] 3. Use the first-grade coarse material as the secondary raw material and use the jet mill to carry out the second-grade crushing. When the part of the secondary raw material with a particle size of 4.5-15 μm accounts for 82% of the total weight of the secondary raw material, use the wind classifier for secondary classification , the separated part with a particle size > 15 μm is regarded as the second-grade coarse ...

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Abstract

The invention discloses a preparation method of silicon carbide cutting edge materials for a photovoltaic industry and belongs to photovoltaic industries. The preparation method of silicon carbide cutting edge materials for a photovoltaic industry comprises the following steps of carrying out coarse crushing of a silicon carbide raw material, carrying out air classification after primary crushing, carrying out coarse screening and fine screening after secondary crushing, carrying out pickling classification to obtain a silicon carbide cutting edge material JIS1000, a silicon carbide cutting edge material JIS1200, a silicon carbide cutting edge material JIS1500 and a silicon carbide cutting edge material JIS2000. The preparation method provided by the invention has the advantages that compared with the traditional technology, the preparation method provided by the invention can realize production of a silicon carbide cutting edge material product having a low roundness value of 0.83 to 0.88 and a high yield of 70 to 75%; and the silicon carbide cutting edge material product obtained by the preparation method can effectively improve crystalline silicon cutting efficiency and slicing quality and obviously reduce the waste of a silicon carbide raw material.

Description

technical field [0001] The invention relates to a method for preparing a cutting blade, in particular to a method for preparing a silicon carbide cutting blade used in the photovoltaic industry. Background technique [0002] With the increasing tension of traditional fossil energy sources such as oil and coal in the world, the energy crisis is imminent. Renewable energy solar energy is the most important new energy source in the 21st century due to its inexhaustible, inexhaustible, clean, safe and other unique advantages. The solar energy industry in China has entered a period of rapid development; when preparing solar cells, it is necessary to cut crystalline silicon (including monocrystalline silicon and polycrystalline silicon) rods or ingots into silicon wafers; Among them, multi-wire cutting technology is used; the working principle of multi-wire cutting is to use silicon carbide blade as abrasive, polyethylene glycol liquid as dispersant, and metal wire to drive silico...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36C01B32/956
Inventor 邢鹏飞曹宝胜
Owner NORTHEASTERN UNIV
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