Transistor and forming method thereof
A transistor and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as poor performance, achieve better performance, reduce time, and improve performance.
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[0047] As mentioned in the background, existing trench metal-oxide-semiconductor field effect transistors have poor performance.
[0048] The inventor of the present invention finds through research, please refer to Figure 5 , in the prior art, after forming the mask layer 104, a conductive plug 106 (such as Figure 4 ) before, using the mask layer 104 as a mask, ion implantation is performed on the semiconductor substrate 100 on both sides of the trench, and thermal annealing is performed to activate the implanted ions to form a source region 105; however, after thermal annealing When the implanted ions are activated, the horizontal diffusion rate of the ions is lower than the vertical diffusion rate; specifically, the lateral diffusion rate of the dopant ions is 60-80% of the vertical diffusion rate; therefore, in order to make the formed source region 105 and gate The contact between the dielectric layer 102 will make the thermal annealing time longer, resulting in the di...
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