Silicon wafer polishing manufacture procedure method

A silicon wafer, rough polishing technology, applied in manufacturing tools, grinding machine tools, metal processing equipment, etc., can solve the problems of increased particle pollution risk of wafer products, increased machine cost investment, and increased process complexity, etc. The effect of particle problem improvement, work burden reduction, and pass rate improvement

Inactive Publication Date: 2012-11-14
SHANGHAI SHENHE THERMO MAGNETICS ELECTRONICS CO LTD
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Three-stage polishing increases the complexity of the process and increases the cost of the machine
[0005] After the wafer is peeled off, it is generally placed in a water tank with surfactants added, but as time goes by, the particles of the grinding liquid brought into the tank and the environmental particles of the production site will gradually accumulate in the tank, and the particles of the wafer product increased risk of contamination
Moreover, replacing pure water and re-preparing solutions will also take up part of the production time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] The silicon wafer polishing process method of the present invention comprises the following steps: S1, pre-cleaning; S2, pasting; S3, rough polishing; S4, medium polishing; S5, fine polishing; S6, peeling; S7, wax removal and cleaning; Among them, rough polishing, intermediate polishing and fine polishing include respectively, S1.1, front decompression water polishing; S1.2, pressurized abrasive liquid polishing; S1.3, post-decompression water polishing; Post-decompression water polishing is followed by a decompression surfactant polishing step.

[0012] The surfactant in the decompression surfactant polishing is polyoxyethylene alkylphenol ether aqueous solution. The concentration of the polyoxyethylene alkylphenol ether aqueous solution is 0.1% to 0.5%. The solvent used in the polyoxyethylene alkylphenol ether aqueous solution is pure water, the resistivity of the pure water is greater than 17MΩ·cm, the number of particles above 0.20μm is less than 20 per milliliter,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
Login to view more

Abstract

The invention discloses a silicon wafer polishing manufacture procedure method, which comprises the following steps of: S1) pre-cleaning; S2) pasting; S3) roughly polishing; S4) moderately polishing; S5) finely polishing; S6) peeling; and S7) dewaxing and cleaning, wherein the steps of roughly polishing, moderately polishing and finely polishing respectively comprise the following steps of: S1.1) carrying out pre-pressure reduction water polishing; S1.2) pressurizing, and polishing grinding fluid; and S1.3) carrying out post-pressure reduction water polishing; and a step of polishing a pressure reduction surfactant is added after the steps of post-pressure reduction water polishing in the steps of roughly polishing and finely polishing. According to the silicon wafer polishing manufacture procedure method disclosed by the invention, the polishing manufacture procedure is simplified, the input of fixed assets is effectively lowered, and the phenomenon of ''rime fog'' on the wafer surface is effectively eliminated by adding the step of ''polishing the pressure reduction surfactant''. After the wafer is peeled by high-quality flowing pure water, according to the short-period storage of the wafer, the particle problem is alleviated, the operations of replacing and preparing the solution are omitted, the operation burden is lightened, and the manufacture procedure percent of pass is improved.

Description

technical field [0001] The invention belongs to the field of production and application of semiconductor materials, in particular to a silicon wafer polishing process method and a manufacturing method thereof. Background technique [0002] Polishing is a necessary process in the processing of silicon wafers (hereinafter referred to as "wafers"). The quality of the polishing process directly affects the quality of the wafer, thereby determining the quality of the final electronic product. [0003] Waxed single-sided polishing process includes the following main steps: cleaning before attaching → attaching → rough polishing → medium polishing → fine polishing → peeling → wax removal and cleaning. Three-stage polishing increases the complexity of the process and increases the cost of the machine. [0004] The three stages of polishing can be briefly divided into the following stages: decompression water polishing → pressurized abrasive liquid polishing → decompression water po...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/02
Inventor 李彬贺贤汉金文明余图斌
Owner SHANGHAI SHENHE THERMO MAGNETICS ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products