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Chemical vapor deposition preparation method of nanocrystal/quantum dot sensitized crystalline silicon battery cell

A technology of chemical vapor deposition and sensitization of crystalline silicon, applied in electrical components, circuits, climate sustainability, etc., can solve the problems of narrow energy band, high production cost, optical loss, etc. of single crystal silicon, and achieve strong absorption, Reduce damage, reduce the effect of surface reflections

Inactive Publication Date: 2015-07-01
SHANGHAI NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The main reasons for restricting the photoelectric conversion efficiency and cost of crystalline silicon cells mainly come from two aspects: single crystal silicon has a narrow energy band and can only absorb sunlight at 600-1000nm; "Form loss, resulting in electrical loss; at the same time, the reflection of part of the sunlight on the surface of the battery panel causes optical loss
In order to reduce these additional losses, technologies such as surface texturing, passivation layer setting, and partition diffusion are usually used to increase photon absorption. These manufacturing processes are cumbersome, involve multiple processes, and the production cost is high.

Method used

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  • Chemical vapor deposition preparation method of nanocrystal/quantum dot sensitized crystalline silicon battery cell
  • Chemical vapor deposition preparation method of nanocrystal/quantum dot sensitized crystalline silicon battery cell
  • Chemical vapor deposition preparation method of nanocrystal/quantum dot sensitized crystalline silicon battery cell

Examples

Experimental program
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Effect test

Embodiment 1

[0030] a) Prepare the cleaning solution according to the ratio of 28% ammonia water: 30% hydrogen peroxide: pure water volume ratio of 1:1:4, put the diffused monocrystalline silicon cell into the cleaning solution, ultrasonically clean it for 10 minutes, take it out, and wash it with pure water ;

[0031] b) Prepare an etching solution with a volume ratio of 40% hydrofluoric acid: absolute ethanol of 3:1, put the cleaned diffused monocrystalline silicon cell into the etching solution, perform ultrasonic etching for 5 minutes, take it out, and wash it with pure water;

[0032] c) Dip the corroded monocrystalline silicon cell in 0.5mol / L ammonium fluoride solution for 5 minutes and perform surface hydrogen termination treatment;

[0033] d) Put the hydrogen-capped monocrystalline silicon cells into a 0.1mol / L tin tetrachloride aqueous solution, immerse in ultrasonic for 5min, perform metal salt treatment, take them out, and put them into a vacuum drying oven;

[0034] e) Accor...

Embodiment 2

[0038] a) Prepare a cleaning solution according to the ratio of 28% ammonia water: 30% hydrogen peroxide: pure water volume ratio of 1:1:3, put the diffused polysilicon cell into the cleaning solution, ultrasonically clean it for 10 minutes, take it out, and wash it with pure water;

[0039] b) Prepare an etching solution with a volume ratio of 40% hydrofluoric acid: absolute ethanol of 1:1, put the cleaned diffused polysilicon cell into the etching solution, perform ultrasonic etching for 3 minutes, take it out, and wash it with pure water;

[0040] c) Dip the corroded polysilicon cell in 0.5mol / L ammonium fluoride solution for 3 minutes with ultrasound for surface hydrogen termination treatment;

[0041] d) Put the hydrogen-capped polysilicon cells into a 0.1mol / L tin tetrachloride aqueous solution, immerse in ultrasonic for 3 minutes, perform metal salt treatment, take them out, and put them into a vacuum drying oven;

[0042] e) According to the size of polysilicon cells (...

Embodiment 3

[0046] The preparation method of this example is the same as that described in Example 1, the difference is that in step b) the corrosion solution is prepared according to the ratio of 40% hydrofluoric acid: absolute ethanol volume ratio of 2:1, and the cleaned diffused single crystal Put the silicon cell into the etching solution, ultrasonically corrode for 15 minutes, take it out, and wash it with pure water.

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Abstract

The invention relates to a chemical vapor deposition preparation method of a nanocrystal / quantum dot sensitized crystalline silicon battery cell, belonging to the fields of semiconductor photoelectric materials and solar batteries. A nanocrystal / quantum dot sensitizing layer is deposited on the diffusion crystalline silicon battery cell by a chemical vapor deposition method; and the nanocrystals / quantum dots have a strong absorption action for sunlight, and thus, have the actions of reducing crystalline silicon battery surface reflection and enhancing the photoelectric properties of the crystalline silicon battery cell. The chemical vapor deposition method provided by the invention has the advantages of low raw material cost and wide application range, and is suitable for large-scale industrial production.

Description

technical field [0001] The invention relates to a chemical vapor deposition preparation method of a nanocrystal / quantum dot sensitized crystalline silicon battery sheet, belonging to the field of semiconductor photoelectric materials and solar batteries. Background technique [0002] In 2011, the global photovoltaic production reached 37.2GW, among which, crystalline silicon cells accounted for nearly 90% of the market share of all photovoltaic cell products. It is estimated that global photovoltaic production will reach 100GW in 2020, and crystalline silicon cells will still play a leading role. [0003] The theoretical conversion efficiency of crystalline silicon cells is about 31%, which is currently the most efficient and most mature photovoltaic device on the market. However, the highest efficiency of crystalline silicon cells reported by the laboratory is 25%, and most of the cells produced on a large scale are limited to about 15%. On the other hand, due to the cumb...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 余锡宾浦旭鑫冯吴亮夏玉胜
Owner SHANGHAI NORMAL UNIVERSITY
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