Power semiconductor module adopting double-sided cooling

Abstract

The invention provides a power semiconductor module adopting double-sided cooling. The power semiconductor module is characterized in that the power semiconductor module (100) contains at least two power semiconductor chips (107, 106) which are arranged between a first substrate (115) and a second substrate (103); each substrate is formed by an intermediate high heat conductivity electric insulation layer and upper and lower metal layers; the metal layers contain circuit structures which realize interconnection between the power semiconductor chips, a positive terminal, a negative terminal, an alternating current output terminal and grid control terminals through welding; the grid control terminals of the power semiconductor chips are arranged in the centers or corners of the chips; a concave cooling plate is reversely installed on an insulation layer (117) or a first metal layer (215a) on the first substrate (115) and the other flat cooling plate is horizontally arranged below the second substrate (103); and the heat of the power semiconductor chips is conducted to the two cooling plates to be dissipated via the first substrate (115) and the second substrate (103), thus realizing double-sided cooling.

Description

technical field [0001] The invention relates to a power semiconductor module. Background technique [0002] With the development of technologies such as hybrid electric vehicles, pure electric vehicles, solar power generation and wind power generation, high-power converters have been widely used. In order to meet the requirements of high power density, the miniaturization of the inverter has become a focus of attention. However, the reduction in size puts forward higher requirements on the heat dissipation and cooling of the power semiconductor module. [0003] At present, high-power semiconductor modules for vehicles generally adopt the method of water circulation single-side cooling and double-side cooling. Patent US2008079021A1 mentions that the junction temperature of power semiconductor chips for vehicles, especially hybrid vehicles, may reach 175°C or even 200°C. Excessively high chip junction temperatures greatly reduce the cycle times of power semiconductor modules...

AI Technical Summary

Problems solved by technology

However, the control terminal of the commonly used IGBT or MOSFET chip is often located in the center of the chip. It is difficult to achieve effective double-sided cooling for chips with this structure using the traditional double-sided cooling method.

In addition, the patent does not provide a substrate design scheme for double-sided cooling in the form of multi-chip parallel connection

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