Gallium-nitride-based light-emitting diode with silver nanowire transparent electrode and manufacturing method of gallium-nitride-based light-emitting diode
A technology of light-emitting diodes and silver nanowires, which can be used in circuits, electrical components, semiconductor devices, etc., and can solve the problems of non-renewable and limited indium.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0027] see Figure 5 As shown, the present invention provides a gallium nitride-based light-emitting diode with a silver nanowire transparent electrode, which includes:
[0028] A substrate 10, the material of the substrate 10 is silicon, sapphire or gallium nitride, and its surface is a plane or a micro-pattern PSS, or a nano-pattern;
[0029] An epitaxial layer 11, fabricated on the substrate 10, the epitaxial layer 11 is stepped, and a mesa 121 is formed on one side thereof, the epitaxial layer 11 is used for excitation, light emission, and electrical injection, wherein the epitaxial layer 11 includes sequential growth The material is an N-type gallium nitride layer, a multi-quantum well light emitting region and a P-type gallium nitride layer;
[0030] A nanometer film 12, grown on the epitaxial layer 11, is used for making current spreading layer, and wherein nanometer film 12 is silver nanowire transparent conductive film; Silver nanowire can realize the light transmitt...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com