Method for manufacturing yttrium barium copper oxide target
A technology of yttrium barium copper oxide and target materials, which is applied in the field of manufacturing high-temperature superconducting thin films, can solve the problems of complex process and poor density of targets, and achieve superconducting performance, small grain size and high density Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0025] The present invention will be further described in detail below in conjunction with specific embodiments, but the present invention is not limited to the following embodiments.
[0026] A preparation method of yttrium-barium-copper-oxygen target material includes the following steps in sequence:
[0027] (1) Put Y 2 O 3 , BaO, CuO are mixed uniformly according to the atomic ratio Y:Ba:Cu=1:2:3 to obtain a mixed powder, Y 2 O 3 , The primary particle size of BaO and CuO is 100~200nm, and the purity is greater than 99.9wt%;
[0028] (2) The mixed powder is formed by cold pressing with a four-column hydraulic press, and the cold pressing pressure is 250MPa;
[0029] (3) Put the cold-pressed mixture into an oxygen atmospheric sintering furnace and sinter at 900°C. The sintering time is 12 hours. After the sintering is completed, it is cooled to room temperature and taken out and crushed into -300 meshes to obtain barium yttrium. Copper oxygen superconducting phase po...
PUM
Property | Measurement | Unit |
---|---|---|
particle size | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com