Resonant-coupling two-way transmission photon crystal waveguide and manufacturing method thereof
A photonic crystal waveguide, bidirectional transmission technology, applied in optical waveguides, light guides, optics, etc., can solve the problems of difficult control of distance parameters between graded optical fibers and photonic crystal devices, the influence of integration, and limitations, and achieve compact structure and high integration. The effect of high degree and simple structure
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specific Embodiment approach 1
[0024] Specific implementation mode 1. Combination Figure 1 to Figure 5 In this embodiment, the resonantly coupled bidirectional transmission photonic crystal waveguide includes a waveguide layer, a low refractive index buried layer 7 and a substrate silicon layer 8. The waveguide layer is located on the upper part of the low refractive index buried layer 7, and the lower part of the low refractive index buried layer The bottom silicon layer 8 is connected; the waveguide layer includes a first waveguide area 1, a defect area and a second waveguide area 2, the first waveguide area 1 is composed of a plurality of dielectric columns 9 periodically arranged, the first waveguide area 1 and the second waveguide area 2 A row of defective dielectric pillars 10 is distributed at the junction of the waveguide, and the row of defective dielectric pillars 10 constitutes a defect region. A row of coupling dielectric pillars 12 is distributed on the outermost part of the second waveguide re...
specific Embodiment approach 2
[0038] Specific embodiment two, combine Figure 6 to Figure 9 This embodiment is described. This embodiment is a method for manufacturing the resonantly coupled bidirectional transmission photonic crystal waveguide described in Embodiment 1. The method is implemented by the following steps:
[0039] The first step is to prepare the scribing groove required for scribing;
[0040] (A) is 600 μm thick to substrate silicon 101, grows the base of 3 μm thick silicon dioxide buried layer 102 on it (such as Figure 6a shown) for cleaning;
[0041] (B) if Figure 6b As shown, a layer of lanthanum aluminate film 103 is prepared on the silicon dioxide buried layer 102 by a sol-gel method;
[0042] (C) if Figure 6c As shown, a photoresist film 104 with a thickness of 2-3 μm is formed on the lanthanum aluminate film 103;
[0043] (D) putting the completed structure of step (C) into an oven for drying;
[0044] (E) if Figure 6d As shown, the photoresist film 104 is exposed to ultra...
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