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Method for manufacturing one time programmable (OTP) device

A device manufacturing method and substrate technology, which are used in semiconductor/solid-state device manufacturing, electrical components, gaseous chemical plating, etc., can solve the problems of shortening the service life of OTP devices and increasing leakage current, and improve data storage characteristics and use. Longevity, the effect of avoiding the increase of defects

Active Publication Date: 2012-07-04
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing 0.18 μm embedded OTP device, that is, the OTP device formed by combining with the 0.18 μm CMOS logic process, often has the problem of increased leakage current during use, which greatly shortens the use of OTP devices. life

Method used

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  • Method for manufacturing one time programmable (OTP) device
  • Method for manufacturing one time programmable (OTP) device
  • Method for manufacturing one time programmable (OTP) device

Examples

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Embodiment 1

[0037] As mentioned in the background section, the manufacturing process of the OTP device can be combined with the CMOS logic process (logic process), so that no additional mask layer is required. However, for 0.18μm embedded OTP devices, the problem of increased leakage current often occurs, which greatly shortens the service life of OTP devices.

[0038] The inventors have found that the reasons for the increase in the leakage current of the 0.18 μm embedded OTP device and the greatly shortened service life of the OTP device are:

[0039] In a common CMOS logic process, the function of the silicide barrier layer (Salicide Block, SAB) is to block part of the polysilicon and the substrate from surface metallization, so as to ensure sufficient resistance value to form the resistance part in the circuit. For embedded OTP devices, another function of the SAB layer is to cover the floating gate of the OTP device to protect the floating gate of the OTP device from being metallized...

Embodiment 2

[0049] The manufacturing method of the OTP device provided by the present invention will be described in detail below with a specific embodiment.

[0050] refer to figure 2 , figure 2 A schematic flow chart of another OTP device manufacturing method provided by the embodiment of the present invention, the method specifically includes the following steps:

[0051] Step S11: providing a substrate.

[0052] In this embodiment, the substrate is a P-type silicon substrate. In other embodiments, the substrate may also be a semiconductor material such as gallium arsenide, germanium, or silicon-on-insulator (SOI) or a combination of semiconductor materials.

[0053] Step S12: forming an active region in the substrate by shallow trench isolation process.

[0054] This step may further include the following steps:

[0055] Step S121 : forming shallow trenches in the substrate.

[0056] In this embodiment, the active regions are defined by a shallow trench isolation (STI) process,...

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Abstract

The embodiment of the invention discloses a method for manufacturing a one time programmable (OTP) device. The method comprises the following steps of: providing a substrate, wherein the substrate comprises a selection gate and a floating gate (FG); and forming a salicide block (SAB) on the FG by pre-deposition and main deposition processes, wherein the pre-deposition process is used for stabilizing the process state of a cavity, and the main deposition process is used for increasing the thickness of the formed SAB. By the method for manufacturing the OTP device, a thick SAB can be formed on the FG, so that damage and defects caused by the subsequent plasma bombardment can be avoided, charges in the FG can be prevented from being leaked after the OTP device is programmed, leakage current is prevented from being increased, and the service life of the OTP device is prolonged.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, and more specifically, relates to a method for manufacturing an OTP device. Background technique [0002] OTP (One Time Programmable, one-time programmable) device is a storage device. Compared with multiple programming, its programming process is an irreversible activity. It is suitable for applications where the program is fixed, because the cost low and widely used. [0003] A plane unit (flat cell) of the OTP device mainly includes two transistors, one is a floating gate transistor, and the other is a selection transistor; wherein, the drain of the selection transistor is connected to the source of the floating gate transistor, and the selection transistor The gate of the transistor is connected to the word line, and the drain of the floating gate transistor is connected to the bit line. The selection transistors are used to select corresponding floating gate transistors...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8246H01L21/316C23C16/42H10B20/00
Inventor 王智勇王德进张磊
Owner CSMC TECH FAB2 CO LTD
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