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Etching liquid for displaying void type defects of heavy-doped N-type Czochralski silicon single crystal

A technology of Czochralski silicon and etching solution, which is used in the preparation of test samples, optical test flaws/defects, etc., can solve problems such as unsuitable silicon single crystal, and achieve regular morphology, fast corrosion rate, and wide application range. Effect

Active Publication Date: 2013-11-20
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] The above three are based on CrO 3 -HF-H 2 The preferred etching solution of the O system is invented for defects such as dislocations, stacking faults, and oxygen precipitation in silicon single crystals, and is not suitable for the display of void defects in silicon single crystals

Method used

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  • Etching liquid for displaying void type defects of heavy-doped N-type Czochralski silicon single crystal
  • Etching liquid for displaying void type defects of heavy-doped N-type Czochralski silicon single crystal
  • Etching liquid for displaying void type defects of heavy-doped N-type Czochralski silicon single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Example 1 Using an etchant to show void-type defects in a Czochralski silicon single crystal heavily doped with arsenic in the crystal orientation

[0036] The silicon wafer is a Czochralski silicon single crystal heavily doped with arsenic in the crystal direction, and its doping concentration is 1.6×10 19 cm -3 , the resistivity is 4.0mΩ·cm.

[0037] Preparation of corrosion solution: prepare chromium trioxide solution with a molar concentration of 0.2mol / L and hydrofluoric acid with a mass concentration of 40% respectively; according to the volume ratio of 1:1, use a graduated cylinder to measure hydrofluoric acid and add it to the chromium trioxide solution In, mix well.

[0038] Etching solution is used for the display of void-type defects on silicon wafers, and the specific steps include:

[0039] (1) Clean the silicon wafer with RCA standard cleaning solution;

[0040] (2) Put the beaker with the corrosive solution in a constant temperature water bath at 30...

Embodiment 2

[0048] Example 2 Using Etching Solution to Display Cavity Defects in the Crystal Orientation Heavy Phosphorus-doped Czochralski Silicon Single Crystal

[0049] The silicon wafer is a Czochralski silicon single crystal heavily doped with phosphorus in the crystal direction, and its doping concentration is 7.4×10 19 cm -3 , the resistivity is 1.0mΩ·cm.

[0050] Preparation of corrosion solution: prepare chromium trioxide solution with a molar concentration of 0.2mol / L and hydrofluoric acid with a mass concentration of 40% respectively; according to the volume ratio of 1:1, use a graduated cylinder to measure hydrofluoric acid and add it to the chromium trioxide solution In, mix well.

[0051] The etchant is used for the display of void-type defects on silicon wafers. The specific steps are the same as those in Example 1. The defect morphology after being photographed by an optical microscope is shown in image 3 .

Embodiment 3

[0055] Example 3 Using Etching Solution to Display Cavity Type Defects in the Crystalline Heavily Doped Phosphorous Czochralski Silicon Single Crystal

[0056] The silicon wafer is a Czochralski silicon single crystal heavily doped with phosphorus in the crystal direction, and its doping concentration is 1.1×10 20 cm -3 , the resistivity is 0.7mΩ·cm.

[0057] Preparation of corrosion solution: prepare chromium trioxide solution with a molar concentration of 0.2mol / L and hydrofluoric acid with a mass concentration of 40% respectively; according to the volume ratio of 1:1, use a graduated cylinder to measure hydrofluoric acid and add it to the chromium trioxide solution In, mix well.

[0058] Etching solution is used for the display of void-type defects on silicon wafers, and the specific steps are the same as those in Example 1; Figure 5 .

[0059] Depend on Figure 5 It can be seen that after the silicon wafer is etched by this embodiment, the defects of the flow patte...

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Abstract

The invention discloses etching liquid for displaying void type defects of a heavy-doped N-type Czochralski silicon single crystal. The etching liquid is prepared by mixing a chromium trioxide solution with hydrofluoric acid according to the volume ratio of 2:3-3:2, wherein the molar concentration of the chromium trioxide solution is 0.2-0.25 mol / l and the mass concentration of the hydrofluoric acid is 40%-49%. The etching liquid is wide in scope of application, can be applied to the preferential etching of void type defects of heavy-doped N-type Czochralski silicon single crystals of different crystal orientations, such as (100), (111) and the like, with the doping concentration of 1.6*10<19> to 1.1*10<20> cm<-3>, and is particularly applicable to the display of void type defects of heavy-doped low-resistance Czochralski silicon single crystals; and the etching liquid has the characteristics of fast speed in etching, good effect in etching, regularity in image morphology, clearness and easiness in distinction, simplicity and convenience in operation and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an etching solution for displaying void-type defects in heavily doped N-type Czochralski silicon single crystals. Background technique [0002] Void defects (Void) in single crystal silicon are formed by the accumulation of vacancies. Their existence will not only severely damage the integrity of the gate oxide (GOI), but also cause PN junction leakage and short circuit of slot capacitors. Or insulation failure and other problems, thereby reducing the yield of integrated circuits. Therefore, there is a need for a simple and quick way to display void-type defects in single crystal silicon to control such harmful defects. [0003] Generally speaking, void-type defects show different forms according to different detection methods, which are called: Crystal Originated Particle (COP), Flow Pattern Defect (FPD) and Light Scattering Tomography Defect (LSTD). [0004...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N1/32G01N21/95
Inventor 马向阳徐涛杨德仁
Owner ZHEJIANG UNIV
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