Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for cleaning alpha-Al2O3 monocrystal

A technology of single crystal and mixed solution, which is applied in the direction of using liquid cleaning methods, cleaning methods and utensils, chemical instruments and methods, etc., can solve the problems of difficult surface pollutants, difficult to dissolve, and clean, and achieve good repeatability, Easy to hold, clean effect

Active Publication Date: 2012-06-20
WUXI HAITE NEW MATERIAL RES INST
View PDF6 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem caused by α-Al 2 o 3 The single crystal surface has strong adsorption, stable surface properties, and is not easy to dissolve, which leads to the existing α-Al 2 o 3 The single crystal cleaning method is difficult to clean the surface pollutants, the invention provides an α-Al 2 o 3 Single crystal cleaning method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for cleaning alpha-Al2O3 monocrystal
  • Method for cleaning alpha-Al2O3 monocrystal
  • Method for cleaning alpha-Al2O3 monocrystal

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0023] Specific implementation mode 1: This implementation mode is α-Al 2 o 3 The cleaning method of single crystal, it is realized through the following steps:

[0024] 1. Pretreatment: a. At room temperature, α-Al 2 o 3 Soak the single crystal in ethanol for 10-15 hours, then wash the α-Al with deionized water 2 o 3 single crystal, then dry with nitrogen; b, at room temperature, the α-Al after step a treatment 2 o 3 The single crystal is placed in a surfactant and ultrasonically treated for 20-50 minutes, and then the α-Al 2 o 3 The single crystal was rinsed with deionized water and dried with nitrogen gas;

[0025] 2. The α-Al treated in step 1 2 o 3 The single crystal is immersed in the mixed solution A at a temperature of 75-85°C for 15-25 minutes, and then the α-Al is washed with deionized water.2 o 3 single crystal, then blow dry with nitrogen, wherein the mixed solution A is a mixed solution of concentrated sulfuric acid and hydrogen peroxide, and the volume...

specific Embodiment approach 2

[0030] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the surfactant in step b of step 1 is an anionic surfactant. Other steps and parameters are the same as those in Embodiment 1.

[0031] In this embodiment, an anionic liquid cleaning agent composed of anionic surfactant ratio is preferred, and all existing commercial anionic liquid cleaning agents can be used in this embodiment.

specific Embodiment approach 3

[0032] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is that the mixed solution A in step two is a mixed solution of concentrated sulfuric acid and hydrogen peroxide, and the volume ratio of concentrated sulfuric acid and hydrogen peroxide is 3:1. Other steps and parameters are the same as those in Embodiment 1 or Embodiment 2.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for cleaning an alpha-Al2O3 monocrystal. According to the method, the problem that surface pollutants cannot be cleaned completely because the alpha-Al2O3 monocrystal has strong surface adsorbability and stable surface performance and is difficult to dissolve in the conventional method for cleaning the alpha-Al2O3 monocrystal is solved. The method for cleaning the alpha-Al2O3 monocrystal comprises the following steps of: soaking the alpha-Al2O3 monocrystal in ethanol and surfactant sequentially; and performing heat soaking treatment in a mixed solution of concentrated sulfuric acid and hydrogen peroxide, a mixed solution of ammonia water, hydrogen peroxide and water and a mixed solution of concentrated hydrochloric acid, hydrogen peroxide and water sequentially. The method for cleaning the alpha-Al2O3 monocrystal is a multi-step wet chemical cleaning method. By the method for cleaning the alpha-Al2O3 monocrystal, the pollutants on the surface of the alpha-Al2O3 monocrystal can be cleaned effectively and completely; the cleaned aluminum oxide monocrystal has high cleanliness; and the cleaning method is high in repeatability. Equipment for cleaning is simple, convenient to operate and easy to master; and the process is safe and pollution-free.

Description

technical field [0001] The present invention relates to a kind of α-Al 2 o 3 Single crystal cleaning method. Background technique [0002] α-Al 2 o 3 is the most common structural form of alumina, α-Al 2 o 3 Single crystal is also called corundum, sapphire, ruby. α-Al 2 o 3 Single crystal has many unique physical and chemical properties, and is an important oxide material for electronics, ceramics, and catalysis. In these applications, sapphire is used as the substrate material required for the epitaxial growth of GaN-based thin films, and the impurities on its polished surface Contamination will directly affect the quality of the subsequent GaN epitaxial layer, thereby seriously affecting the light-emitting performance of GaN-based light-emitting diodes (LEDs). In current LED production, more than 50% of waste is still due to sapphire surface contamination, so effective and repeatable sapphire cleaning methods are of great importance to those engaged in sapphire wa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B08B3/08B08B3/12C30B33/00
Inventor 张丹甘阳
Owner WUXI HAITE NEW MATERIAL RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com