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Preparation method for grapheme thin film with local monoatomic layer

A single atomic layer graphite, multi-layer graphene technology, applied in coating, ion implantation plating, metal material coating process and other directions, to achieve the effect of improving the success rate, simple operation and high crystallinity

Inactive Publication Date: 2012-06-13
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If you want to re-prepare a nanopore with a small enough thickness, you need to process the prototype device and re-lay a new graphene film. The process is cumbersome and wastes a lot

Method used

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  • Preparation method for grapheme thin film with local monoatomic layer
  • Preparation method for grapheme thin film with local monoatomic layer
  • Preparation method for grapheme thin film with local monoatomic layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The multi-layer graphene film is suspended on the Cu grid of the carrier platform, and then the carrier platform is placed in a transmission electron microscope;

[0025] Multi-layer graphene film in 10 -6 Pa heated to 450°C in vacuum for 30 minutes, with a dose of 285A / cm 2 1. An electron beam with a beam diameter of 13nm was irradiated for 25 minutes to obtain a graphene film with a single atomic layer thickness. The relevant results are shown in the attached figure 1 and figure 2 .

[0026] figure 1 It is a transmission electron micrograph of the thinning process of the graphene thin film obtained by the present invention; from a to b in the figure, it can be clearly seen that the area of ​​single-layer graphene expands.

[0027] figure 2 It is a transmission electron microscope image of graphene with monoatomic layer thickness after thinning obtained by the present invention. Since the processing process is visible, the thickness of the graphene before th...

Embodiment 2

[0029] The multi-layer graphene film is suspended on the carrier platform SiN substrate, and then the carrier platform is placed in a transmission electron microscope;

[0030] Multi-layer graphene film in 10 -6 After heating to 1000° C. in Pa vacuum for 30 minutes, an electron beam with a beam diameter of 10 nm was irradiated for 5 minutes to obtain a graphene film with a single atomic layer thickness.

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Abstract

The invention discloses a preparation method for a grapheme thin film with a local monoatomic layer. The preparation method comprises the following steps: first, placing a plurality of graphene thin film layers on a carrier table in such a manner that the part to be processed is hung in the air, and then placing the carrier table in a transmission electron microscope; and second, heating the graphene thin film layers to be 300 to 1300 DEG C, irradiating the surfaces at the part to be processed of the graphene thin film layers through converged high-power electron beams of which the electric current density is larger than 1*102 A / cm<2> for 1 to 60 min to ensure that the carbon atoms on the surfaces at the part to be processed of the graphene thin film layers are bombarded unceasingly to splash, and peeling off layer by layer to form graphene with a few layers or even one layer and high crystallinity. The thickness of graphene and the area of a single layer of graphene can be controlled by adjusting the diameters, the electric current density and the irradiation of electron beams. The invention has the advantage that a plurality of graphene layers can be thinned, so as to prepare high-quality single-layered graphene thin film, which can greatly improve the preparation success rate.

Description

Technical field The [0001] The present invention is a method of nano -processing technology and nano -device manufacturing, and specially involves a method of thinning graphene film to a single layer thickness. Background technique: [0002] Graphene is a new type of carbon material with a two -dimensional honeycomb structure accumulated by a single -layer carbon atom. It has excellent mechanical and electrical properties. It can be used to prepare high -sensitivity Na sensing device, room temperature ballistic field effect tube, and the effect of room temperature ballistic field.Single electronic devices are even all -carbon integrated circuits. At the same time, graphene has a high ratio area and can be used as a carrier material for catalysts, so it has broad application prospects. [0003] The nanothee device based on solid nanohole is considered the basis of the third -generation DNA sequencing. The prototype device of the sensor of the nanosyin is used to detect a single D...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/06
Inventor 徐涛尹奎波孙立涛徐峰贺龙兵谢骁
Owner SOUTHEAST UNIV
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