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THz-wave detector

A detector and terahertz technology, applied in the field of terahertz wave detection research, can solve the problems of high noise and low sensitivity, and achieve the effects of compact device structure, improved sensitivity, and easy integration

Active Publication Date: 2012-05-09
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

They discovered in 1996 that the instability theory of two-dimensional electron gas (2DEG) can be applied to the detection of THz waves, and also realized the detection of THz waves experimentally, but such devices generally need to work at low temperatures, And the sensitivity is low, the noise is relatively large

Method used

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Embodiment 1

[0044] When the distance between the gate electrode and the source electrode is relatively large, the detection mechanism satisfies the self-mixing theory. Under the irradiation of terahertz waves, since the response of the antenna to THz waves is related to the polarization direction of the electric field (such as Figure 6As shown), when the terahertz wave is vertically incident on the front of the detector, and the long side of the antenna is parallel to the direction of the electric field, the responsivity of the antenna is the largest, and the obtained photocurrent is the largest. When the terahertz wave is vertically incident on the front of the detector , and when the long side of the antenna is perpendicular to the direction of the electric field, the responsivity of the antenna is the smallest, and the photocurrent obtained is the smallest. Due to the coupling effect of the antenna, the electric field in the horizontal direction (parallel to the channel) and the verti...

Embodiment 2

[0046] When the distance between the gate and source electrodes and the length of the gate are small, and the gate electrode is asymmetrical with respect to the source and drain electrodes, the detection mechanism satisfies the shallow water wave detection theory of plasma waves. If the gate electrode is made into an asymmetric structure, that is, the distance between the gate and the source electrode is not equal to the distance between the gate and the drain electrode, and the length of the gate electrode is reduced to 10 2 At the nanometer level, the plasma wave can be excited under the radiation of the terahertz wave. Due to the asymmetry of the device structure, under certain boundary conditions (that is, a constant bias DC voltage is applied between the gate and the source electrode, And a constant bias DC current is added between the source and drain electrodes), due to the instability of the plasma wave, a DC photovoltage will be generated, which satisfies the shallow w...

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Abstract

The invention discloses a THz-wave detector, which uses a high-electron-mobility field effect transistor (FET) with higher two-dimensional electron concentration as a basic structure unit, wherein the FET is provided with a source electrode, a gate electrode and a drain electrode. The THz-wave detector is characterized in that the device structure of the THz-wave detector comprises three lead electrodes, three low pass filters and a group of THz-wave coupled antennas, wherein the three electrodes of the FET and the THz-wave coupled antennas are connected to jointly serve as antennas; and the three electrodes of the FET are respectively connected with the corresponding lead electrodes through the low pass filters. The THz-wave detector has the advantages that the antennas are separated from the lead electrodes through the low pass filters, so the resonance performance of the antennas can be guaranteed, and the decrease of the device responsivity, which is caused by the leakage of high frequency THz-wave signals produced by the antennas to the lead electrodes through straight conducting wires, is prevented; and an ohmic contact is simultaneously provided with the source electrode, the drain electrode and the antennas, so the device structure is compact, the integration is facilitated, and a foundation is laid for the realization of the arraying and large-scale application of the THz-wave detector.

Description

technical field [0001] The invention relates to a spectrum detection device, in particular to a spectrum detection device which realizes high-speed, high-sensitivity, and high-signal-to-noise ratio detection of THz waves at room temperature, and belongs to the technical field of terahertz wave detection research. Background technique [0002] Terahertz (Terahertz, THz) radiation is a general term for electromagnetic radiation in a specific band, usually referring to electromagnetic waves with a frequency in the range of 0.1THz to 10THz (wavelength 3mm to 30um), which is located in the microwave and infrared radiation in the electromagnetic spectrum. between. In the field of electronics, electromagnetic waves in this band are also called millimeter waves and submillimeter waves; in the field of spectroscopy, it is also called far-infrared rays. [0003] The reason why terahertz radiation arouses our strong interest is that it has many unique properties and broad application ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01V8/00H01L21/335
Inventor 孙云飞孙建东曾春红周宇吴东岷秦华张宝顺
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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