SOI structure with reinforced anti-irradiation performance and manufacturing method thereof

Abstract

The invention provides an SOI (Silicon-On-Insulator) structure with reinforced anti-irradiation performance and a manufacturing method thereof. The manufacturing method of the SOI structure with reinforced anti-irradiation performance comprises the following steps: providing two wafers, and forming an insulation oxide layer on a surface of at least one wafer; carrying out injection of an irradiation proton, an irradiation neutron and the like on the insulation oxide layer, and introducing displacement damage in the insulation oxide layer; carrying out bonding of the two wafers through the insulation oxide layer; thinning one of the two wafers after bonding to form an SOI structure. In a process of utilizing bonding technology to prepare an SOI, through a method of injecting the proton, the neutron and the like into a buried oxide layer and introducing the displacement damage to form a composite center, anti-irradiation performance of an SOI device is raised, simultaneously, damage of a top silicon layer is avoided, and the performance of the device is not influenced.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to a reinforced SOI structure with anti-radiation performance and a manufacturing method thereof. Background technique [0002] Compared with other semiconductor device technologies, silicon-on-insulator (Silicon-On-Insulator, SOI) technology is a full dielectric isolation technology. A typical SOI CMOS structure such as figure 1 As shown, there is a dielectric layer-buried oxide layer between the top silicon film and the substrate to isolate the active region of the device from the substrate. Because the buried oxide layer achieves good isolation, SOI devices have incomparable advantages in terms of device radiation resistance performance, which is also the motivation for the initial development of SOI technology. [0003] Although the SOI device achieves good isolation due to the existence of the buried oxide layer, the active area of ​​the device is small, has lower lea...

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Problems solved by technology

[0005] However, while implanting ions into the buried oxide layer, it will inevitably cause some implantation damage to the top layer material; in addition, while ion implantation can effectively improve the radiation resistance of the buried oxide layer, it will definitely affect the buried oxide layer. The internal microstructure of the material is macroscopically manifested as a change in the electrical properties of the buried oxide layer, and such changes may in turn affect the radiation-resistant strengthening effect of ion implantation on the material.

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